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Results: 1-20 |
Results: 20
SURFACE-POTENTIAL DETERMINATION IN IRRADIATED MOS-TRANSISTORS COMBINING CURRENT-VOLTAGE AND CHARGE-PUMPING MEASUREMENTS
Authors: MASSON P AUTRAN JL RAYNAUD C FLAMENT O PAILLET P CHABRERIE C
Citation: P. Masson et al., SURFACE-POTENTIAL DETERMINATION IN IRRADIATED MOS-TRANSISTORS COMBINING CURRENT-VOLTAGE AND CHARGE-PUMPING MEASUREMENTS, IEEE transactions on nuclear science, 45(3), 1998, pp. 1355-1364
A METHODOLOGY TO STUDY LATERAL PARASITIC TRANSISTORS IN CMOS TECHNOLOGIES
Authors: FLAMENT O CHABRERIE C FERLETCAVROIS V LERAY JL FACCIO F JARRON P
Citation: O. Flament et al., A METHODOLOGY TO STUDY LATERAL PARASITIC TRANSISTORS IN CMOS TECHNOLOGIES, IEEE transactions on nuclear science, 45(3), 1998, pp. 1385-1389
INSULATOR PHOTOCURRENTS - APPLICATION TO DOSE-RATE HARDENING OF CMOS SOI INTEGRATED-CIRCUITS/
Authors: DUPONTNIVET E COIC YM FLAMENT O TINEL F
Citation: E. Dupontnivet et al., INSULATOR PHOTOCURRENTS - APPLICATION TO DOSE-RATE HARDENING OF CMOS SOI INTEGRATED-CIRCUITS/, IEEE transactions on nuclear science, 45(3), 1998, pp. 1412-1419
IONIZING DOSE HARDNESS ASSURANCE METHODOLOGY FOR QUALIFICATION OF A BICMOS TECHNOLOGY DEDICATED TO HIGH-DOSE LEVEL APPLICATIONS
Authors: FLAMENT O MUSSEAU O LERAY JL DUTISSEUIL E CORBIERE T
Citation: O. Flament et al., IONIZING DOSE HARDNESS ASSURANCE METHODOLOGY FOR QUALIFICATION OF A BICMOS TECHNOLOGY DEDICATED TO HIGH-DOSE LEVEL APPLICATIONS, IEEE transactions on nuclear science, 45(3), 1998, pp. 1420-1424
A NEW INTEGRATED TEST STRUCTURE FOR ON-CHIP POSTIRRADIATION ANNEALINGIN MOS DEVICES
Authors: CHABRERIE C AUTRAN JL FLAMENT O BOUDENOT JC
Citation: C. Chabrerie et al., A NEW INTEGRATED TEST STRUCTURE FOR ON-CHIP POSTIRRADIATION ANNEALINGIN MOS DEVICES, IEEE transactions on nuclear science, 45(3), 1998, pp. 1438-1443
CHARGE-PUMPING ANALYSIS OF RADIATION EFFECTS IN LOCOS PARASITIC TRANSISTORS
Authors: FLAMENT O AUTRAN JL PAILLET P ROCHE P FAYNOT O TRUCHE R
Citation: O. Flament et al., CHARGE-PUMPING ANALYSIS OF RADIATION EFFECTS IN LOCOS PARASITIC TRANSISTORS, IEEE transactions on nuclear science, 44(6), 1997, pp. 1930-1938
ISOTHERMAL AND ISOCHRONAL ANNEALING METHODOLOGY TO STUDY POSTIRRADIATION TEMPERATURE ACTIVATED PHENOMENA
Authors: CHABRERIE C AUTRAN JL PAILLET P FLAMENT O LERAY JL BOUDENOT JC
Citation: C. Chabrerie et al., ISOTHERMAL AND ISOCHRONAL ANNEALING METHODOLOGY TO STUDY POSTIRRADIATION TEMPERATURE ACTIVATED PHENOMENA, IEEE transactions on nuclear science, 44(6), 1997, pp. 2007-2012
RADIATION-INDUCED INTERFACE TRAPS IN HARDENED MOS-TRANSISTORS - AN IMPROVED CHARGE-PUMPING STUDY
Authors: AUTRAN JL CHABRERIE C PAILLET P FLAMENT O LERAY JL BOUDENOT JC
Citation: Jl. Autran et al., RADIATION-INDUCED INTERFACE TRAPS IN HARDENED MOS-TRANSISTORS - AN IMPROVED CHARGE-PUMPING STUDY, IEEE transactions on nuclear science, 43(6), 1996, pp. 2547-2557
2-DIMENSIONAL SIMULATION OF TOTAL-DOSE EFFECTS ON NMOSFET WITH LATERAL PARASITIC TRANSISTOR
Authors: BRISSET C FERLETCAVROIS V FLAMENT O MUSSEAU O LERAY JL PELLOIE JL ESCOFFIER R MICHEZ A CIRBA C BORDURE G
Citation: C. Brisset et al., 2-DIMENSIONAL SIMULATION OF TOTAL-DOSE EFFECTS ON NMOSFET WITH LATERAL PARASITIC TRANSISTOR, IEEE transactions on nuclear science, 43(6), 1996, pp. 2651-2658
ENHANCED TOTAL-DOSE DAMAGE IN JUNCTION FIELD-EFFECT TRANSISTORS AND RELATED LINEAR INTEGRATED-CIRCUITS
Authors: FLAMENT O AUTRAN JL ROCHE P LERAY JL MUSSEAU O TRUCHE R ORSIER E
Citation: O. Flament et al., ENHANCED TOTAL-DOSE DAMAGE IN JUNCTION FIELD-EFFECT TRANSISTORS AND RELATED LINEAR INTEGRATED-CIRCUITS, IEEE transactions on nuclear science, 43(6), 1996, pp. 3060-3067
DMILL, A MIXED ANALOG-DIGITAL RADIATION-HARD BICMOS TECHNOLOGY FOR HIGH-ENERGY PHYSICS ELECTRONICS
Authors: DENTAN M ABBON P BORGEAUD P DELAGNES E FOURCHES N LACHARTRE D LUGIEZ F PAUL B ROUGER M TRUCHE R BLANC JP LEROUX C DELEVOYEORSIER E PELLOIE JL DEPONTCHARRA J FLAMENT O GUEBHARD JM LERAY JL MONTARON J MUSSEAU O VITEZ A BLANQUART L AUBERT JJ BONZOM V DELPIERRE P HABRARD MC MEKKAOUI A POTHEAU R ARDELEAN J HRISOHO A BRETON D
Citation: M. Dentan et al., DMILL, A MIXED ANALOG-DIGITAL RADIATION-HARD BICMOS TECHNOLOGY FOR HIGH-ENERGY PHYSICS ELECTRONICS, IEEE transactions on nuclear science, 43(3), 1996, pp. 1763-1767
X-RADIATION RESPONSE OF SIMOX BURIED OXIDES - INFLUENCE OF THE FABRICATION PROCESS
Authors: PAILLET P AUTRAN JL FLAMENT O LERAY JL ASPAR B AUBERTONHERVE AJ
Citation: P. Paillet et al., X-RADIATION RESPONSE OF SIMOX BURIED OXIDES - INFLUENCE OF THE FABRICATION PROCESS, IEEE transactions on nuclear science, 43(3), 1996, pp. 821-825
POSTIRRADIATION EFFECTS IN A RAD-HARD TECHNOLOGY
Authors: CHABRERIE C MUSSEAU O FLAMENT O LERAY JL BOUDENOT JC SHIPMAN B CALLEWAERT H
Citation: C. Chabrerie et al., POSTIRRADIATION EFFECTS IN A RAD-HARD TECHNOLOGY, IEEE transactions on nuclear science, 43(3), 1996, pp. 826-830
ANALYSIS OF LOCAL AND GLOBAL TRANSIENT EFFECTS IN A CMOS SRAM
Authors: GARDIC F MUSSEAU O FLAMENT O BRISSET C FERLETCAVROIS V MARTINEZ M CORBIERE T
Citation: F. Gardic et al., ANALYSIS OF LOCAL AND GLOBAL TRANSIENT EFFECTS IN A CMOS SRAM, IEEE transactions on nuclear science, 43(3), 1996, pp. 899-906
DYNAMIC SINGLE EVENT EFFECTS IN A CMOS THICK SOI SHIFT REGISTER/
Authors: GARDIC F FLAMENT O MUSSEAU O BRISSET C MARTINEZ M BRUNET JP BLANQUART L
Citation: F. Gardic et al., DYNAMIC SINGLE EVENT EFFECTS IN A CMOS THICK SOI SHIFT REGISTER/, IEEE transactions on nuclear science, 43(3), 1996, pp. 960-966
THE USE OF X-RAY SOURCES FOR HARDNESS STU DY, CONTROL AND OPTIMIZATION OF PROCESS FOR MICROELECTRONIC DEVICES
Authors: FLAMENT O
Citation: O. Flament, THE USE OF X-RAY SOURCES FOR HARDNESS STU DY, CONTROL AND OPTIMIZATION OF PROCESS FOR MICROELECTRONIC DEVICES, Onde electrique, 75(3), 1995, pp. 72-76
EFFECT OF RAPID THERMAL ANNEALING ON RADIATION HARDENING OF MOS DEVICES
Authors: FLAMENT O LERAY JL MARTIN F ORSIER E PELLOIE JL TRUCHE R DEVINE RAB
Citation: O. Flament et al., EFFECT OF RAPID THERMAL ANNEALING ON RADIATION HARDENING OF MOS DEVICES, IEEE transactions on nuclear science, 42(6), 1995, pp. 1667-1673
STUDY OF PROTON RADIATION EFFECTS ON ANALOG IC DESIGNED FOR HIGH-ENERGY PHYSICS IN A BICMOS-JFET RADHARD SOI TECHNOLOGY
Authors: BLANQUART L DELPIERRE P HABRARD MC MEKKAOUI A MOUTHUY T DENTAN M DELAGNES E FOURCHES N ROUGER M TRUCHE R DELEVOYE E DEPONTCHARRA J BLANC JP FLAMENT O LERAY JL MUSSEAU O
Citation: L. Blanquart et al., STUDY OF PROTON RADIATION EFFECTS ON ANALOG IC DESIGNED FOR HIGH-ENERGY PHYSICS IN A BICMOS-JFET RADHARD SOI TECHNOLOGY, IEEE transactions on nuclear science, 41(6), 1994, pp. 2525-2529
RADIATION EFFECTS ON SOI ANALOG DEVICES PARAMETERS
Authors: FLAMENT O LERAY JL MARTIN JL MONTARON J RAFFAELLI M BLANC JP DELEVOYE E GAUTIER J PELLOIE JL DEPONCHARRA J TRUCHE R DELAGNES E DENTAN M FOURCHES N
Citation: O. Flament et al., RADIATION EFFECTS ON SOI ANALOG DEVICES PARAMETERS, IEEE transactions on nuclear science, 41(3), 1994, pp. 565-571
STUDY OF A CMOS-JFET-BIPOLAR RADIATION-HARD ANALOG-DIGITAL TECHNOLOGYSUITABLE FOR HIGH-ENERGY PHYSICS ELECTRONICS
Authors: DENTAN M DELAGNES E FOURCHES N ROUGER M HABRARD MC BLANQUART L DELPIERRE P POTHEAU R TRUCHE R BLANC JP DELEVOYE E GAUTIER J PELLOIE JL DEPONTCHARRA J FLAMENT O LERAY JL MARTIN JL MONTARON J MUSSEAU O
Citation: M. Dentan et al., STUDY OF A CMOS-JFET-BIPOLAR RADIATION-HARD ANALOG-DIGITAL TECHNOLOGYSUITABLE FOR HIGH-ENERGY PHYSICS ELECTRONICS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1555-1560
Risultati: 1-20 |