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Results: 1-25 | 26-26
Results: 1-25/26
SEU SENSITIVE DEPTH IN A SUBMICRON SRAM TECHNOLOGY
Authors: DETCHEVERRY C ECOFFET R DUZELLIER S LORFEVRE E BRUGUIER G BARAK J LIFSHITZ Y PALAU JM GASIOT J
Citation: C. Detcheverry et al., SEU SENSITIVE DEPTH IN A SUBMICRON SRAM TECHNOLOGY, IEEE transactions on nuclear science, 45(3), 1998, pp. 1612-1616
SEB OCCURRENCE IN A VIP - INFLUENCE OF THE EPI-SUBSTRATE JUNCTION
Authors: LORFEVRE E SUDRE C DACHS C DETCHEVERRY C PALAU JM GASIOT J CALVET MC GARNIER J ECOFFET R
Citation: E. Lorfevre et al., SEB OCCURRENCE IN A VIP - INFLUENCE OF THE EPI-SUBSTRATE JUNCTION, IEEE transactions on nuclear science, 45(3), 1998, pp. 1624-1627
EXPERIMENTAL-DETERMINATION OF THE FREQUENCY FACTOR OF THERMAL ANNEALING PROCESSES IN METAL-OXIDE-SEMICONDUCTOR GATE-OXIDE STRUCTURES
Authors: SAIGNE F DUSSEAU L ALBERT L FESQUET J GASIOT J DAVID JP ECOFFET R SCHRIMPF RD GALLOWAY KF
Citation: F. Saigne et al., EXPERIMENTAL-DETERMINATION OF THE FREQUENCY FACTOR OF THERMAL ANNEALING PROCESSES IN METAL-OXIDE-SEMICONDUCTOR GATE-OXIDE STRUCTURES, Journal of applied physics, 82(8), 1997, pp. 4102-4107
PREDICTION OF LOW DOSE-RATE EFFECTS IN POWER METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS BASED ON ISOCHRONAL ANNEALING MEASUREMENTS
Authors: DUSSEAU L RANDOLPH TL SCHRIMPF RD GALLOWAY KF SAIGNE F FESQUET J GASIOT J ECOFFET R
Citation: L. Dusseau et al., PREDICTION OF LOW DOSE-RATE EFFECTS IN POWER METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS BASED ON ISOCHRONAL ANNEALING MEASUREMENTS, Journal of applied physics, 81(5), 1997, pp. 2437-2441
EXPERIMENTAL VALIDATION OF AN ACCELERATED METHOD OF OXIDE-TRAP-LEVEL CHARACTERIZATION FOR PREDICTING LONG-TERM THERMAL EFFECTS IN METAL-OXIDE-SEMICONDUCTOR DEVICES
Authors: SAIGNE F DUSSEAU L FESQUET J GASIOT J DAVID JP SCHRIMPF RD GALLOWAY KF
Citation: F. Saigne et al., EXPERIMENTAL VALIDATION OF AN ACCELERATED METHOD OF OXIDE-TRAP-LEVEL CHARACTERIZATION FOR PREDICTING LONG-TERM THERMAL EFFECTS IN METAL-OXIDE-SEMICONDUCTOR DEVICES, IEEE transactions on nuclear science, 44(6), 1997, pp. 2001-2006
SEU CRITICAL CHARGE AND SENSITIVE AREA IN A SUBMICRON CMOS TECHNOLOGY
Authors: DETCHEVERRY C DACHS C LORFEVRE E SUDRE C BRUGUIER G PALAU JM GASIOT J ECOFFET R
Citation: C. Detcheverry et al., SEU CRITICAL CHARGE AND SENSITIVE AREA IN A SUBMICRON CMOS TECHNOLOGY, IEEE transactions on nuclear science, 44(6), 1997, pp. 2266-2273
HEAVY-ION-INDUCED FAILURES IN A POWER IGBT
Authors: LORFEVRE E DACHS C DETCHEVERRY C PALAU JM GASIOT J ROUBAUD F CALVET MC ECOFFET R
Citation: E. Lorfevre et al., HEAVY-ION-INDUCED FAILURES IN A POWER IGBT, IEEE transactions on nuclear science, 44(6), 1997, pp. 2353-2357
STATIC CHARACTERISTIC AND TRANSIENT-BEHAVIOR OF A N-X RAY(PNN+ TRANSISTOR IRRADIATED WITH FLASH)
Authors: SUDRE C DACHS C PELANCHON F PALAU JN GASIOT J
Citation: C. Sudre et al., STATIC CHARACTERISTIC AND TRANSIENT-BEHAVIOR OF A N-X RAY(PNN+ TRANSISTOR IRRADIATED WITH FLASH), Radiation effects and defects in solids, 139(4), 1996, pp. 229-239
LASER-HEATING OF THERMOLUMINESCENT FILMS - DOSE MAPPING APPLIED TO BETA-DOSIMETRY
Authors: SETZKORN R PREVOST H GASIOT J CHRISTENSEN P
Citation: R. Setzkorn et al., LASER-HEATING OF THERMOLUMINESCENT FILMS - DOSE MAPPING APPLIED TO BETA-DOSIMETRY, Radiation protection dosimetry, 66(1-4), 1996, pp. 419-422
SOLID-STATE INTEGRATED RADIATION SENSOR DEVELOPMENT
Authors: STOEBE TG CHEN TC SMITH KR THIBADO J GASIOT J PREVOST H MISSOUS O
Citation: Tg. Stoebe et al., SOLID-STATE INTEGRATED RADIATION SENSOR DEVELOPMENT, Radiation protection dosimetry, 66(1-4), 1996, pp. 427-429
THERMOLUMINESCENCE OF LIF-MG,CU,P (GR-200A) TLD AFTER ANNEALING BETWEEN 200-DEGREES-C AND 400-DEGREES-C
Authors: CAI GG FESQUET J DUSSEAU L MARTINI M MEINARDI F HUANG BL TANG KY BETEILLE D GASIOT J
Citation: Gg. Cai et al., THERMOLUMINESCENCE OF LIF-MG,CU,P (GR-200A) TLD AFTER ANNEALING BETWEEN 200-DEGREES-C AND 400-DEGREES-C, Radiation protection dosimetry, 65(1-4), 1996, pp. 163-166
DOSE-RESPONSE OF THE INDIVIDUAL PEAK FOR LIF-MG,TI (TLD-100) AND LIF-MG,CU,P (GR-200A) TL MATERIALS AT THE PHOTON ENERGIES OF 30, 104, 1250KEV
Authors: CAI GG BESTION N WANG SS SHEN WX DELARD R VOLPILIERE J FESQUET J GASIOT J
Citation: Gg. Cai et al., DOSE-RESPONSE OF THE INDIVIDUAL PEAK FOR LIF-MG,TI (TLD-100) AND LIF-MG,CU,P (GR-200A) TL MATERIALS AT THE PHOTON ENERGIES OF 30, 104, 1250KEV, Radiation protection dosimetry, 65(1-4), 1996, pp. 213-215
LASER-HEATING OF THERMOLUMINESCENT PLATES - APPLICATION TO INTRAOPERATIVE RADIOTHERAPY
Authors: BETEILLE D SETZKORN R PREVOST H DUSSEAU L FESQUET J GASIOT J MURARO S DELARD R DUBOIS JB AILLERES N MISSOUS O
Citation: D. Beteille et al., LASER-HEATING OF THERMOLUMINESCENT PLATES - APPLICATION TO INTRAOPERATIVE RADIOTHERAPY, Medical physics, 23(8), 1996, pp. 1421-1424
UV EMISSIONS IN THE THERMOSTIMULATED LUMINESCENCE OF CASO4 - DY3- INFLUENCE OF THE HOST CASO4 LATTICE, DY3+ CONCENTRATION, AND TM3+ CODOPING( )
Authors: LAPRAZ D GOYET D GEROME V IACCONI P PREVOST H GASIOT J BAUMER A
Citation: D. Lapraz et al., UV EMISSIONS IN THE THERMOSTIMULATED LUMINESCENCE OF CASO4 - DY3- INFLUENCE OF THE HOST CASO4 LATTICE, DY3+ CONCENTRATION, AND TM3+ CODOPING( ), Physica status solidi. a, Applied research, 153(1), 1996, pp. 239-247
A STUDY INVOLVING THE DESIGN AND THE FABRICATION PROCESS ON THE SRAM BEHAVIOR DURING A DOSE-RATE EVENT
Authors: MAREC R MARY P GAILLARD R PALAU JM BRUGUIER G GASIOT J
Citation: R. Marec et al., A STUDY INVOLVING THE DESIGN AND THE FABRICATION PROCESS ON THE SRAM BEHAVIOR DURING A DOSE-RATE EVENT, IEEE transactions on nuclear science, 43(3), 1996, pp. 851-857
DOSIMETRY FOR COMPONENT QUALIFICATION
Authors: MONDOT E MAGNAC Y NADAI JP GASIOT J
Citation: E. Mondot et al., DOSIMETRY FOR COMPONENT QUALIFICATION, Onde electrique, 75(3), 1995, pp. 88-93
CORDLESS FILMLESS DENTAL RADIOGRAPHY
Authors: MISSOUS O LAPEYRIE P DEVILLEDEFERIERE D GASIOT J
Citation: O. Missous et al., CORDLESS FILMLESS DENTAL RADIOGRAPHY, Journal of dental research, 74(3), 1995, pp. 917-917
EVALUATION OF THE UPSET RISK IN CMOS SRAM THROUGH FULL 3-DIMENSIONAL SIMULATION
Authors: MOREAU Y DUZELLIER S GASIOT J
Citation: Y. Moreau et al., EVALUATION OF THE UPSET RISK IN CMOS SRAM THROUGH FULL 3-DIMENSIONAL SIMULATION, IEEE transactions on nuclear science, 42(6), 1995, pp. 1789-1796
SIMULATION AIDED HARDENING OF N-CHANNEL POWER MOSFETS TO PREVENT SINGLE EVENT BURNOUT
Authors: DACHS C ROUBAUD F PALAU JM BRUGUIER G GASIOT J TASTET P CALVET MC CALVEL P
Citation: C. Dachs et al., SIMULATION AIDED HARDENING OF N-CHANNEL POWER MOSFETS TO PREVENT SINGLE EVENT BURNOUT, IEEE transactions on nuclear science, 42(6), 1995, pp. 1935-1939
SUMMARY OF THE 1994 IEEE INTERNATIONAL NUCLEAR AND SPACE RADIATION EFFECTS CONFERENCE
Authors: OLDMAN TR FLEETWOOD DM CHEEK T MASSENGILL L VANVONNO N SHANEYFELT MR EISEN H BOESCH HE SCHRIMPF RD CAMPBELL A BENDEKOVIC J EMILY D GRAWET S MARSHALL P BUCHNER S GASIOT J COSS J KRULL W FARREN J FREDERICKSON R LELIS A AMRAM A LENAHAN P
Citation: Tr. Oldman et al., SUMMARY OF THE 1994 IEEE INTERNATIONAL NUCLEAR AND SPACE RADIATION EFFECTS CONFERENCE, IEEE transactions on nuclear science, 41(6), 1994, pp. 1804-1807
EVIDENCE OF THE IONS IMPACT POSITION EFFECT ON SEB IN N-CHANNEL POWERMOSFETS
Authors: DACHS C ROUBAUD F PALAU JM BRUGUIER G GASIOT J TASTET P
Citation: C. Dachs et al., EVIDENCE OF THE IONS IMPACT POSITION EFFECT ON SEB IN N-CHANNEL POWERMOSFETS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2167-2171
THE EFFECT OF LAYOUT MODIFICATION ON LATCHUP TRIGGERING IN CMOS BY EXPERIMENTAL AND SIMULATION APPROACHES
Authors: DELAROCHETTE H BRUGUIER G PALAU JM GASIOT J ECOFFET R
Citation: H. Delarochette et al., THE EFFECT OF LAYOUT MODIFICATION ON LATCHUP TRIGGERING IN CMOS BY EXPERIMENTAL AND SIMULATION APPROACHES, IEEE transactions on nuclear science, 41(6), 1994, pp. 2222-2228
A NEW PROCEDURE FOR STATIC RAM EVALUATION UNDER X-RAY PULSES
Authors: MAREC R MARY P FERRANT R FAIRBANK X GAILLARD R PALAU JM GASIOT J
Citation: R. Marec et al., A NEW PROCEDURE FOR STATIC RAM EVALUATION UNDER X-RAY PULSES, IEEE transactions on nuclear science, 41(6), 1994, pp. 2467-2473
UV EMISSION IN THE TL PEAKS OF CASO4DY - ORIGIN AND APPLICATION TO HIGH-TEMPERATURE DOSIMETRY
Authors: GOYET D LAPRAZ D IACCONI P PORTAL G BARTHE J PREVOST H GASIOT J
Citation: D. Goyet et al., UV EMISSION IN THE TL PEAKS OF CASO4DY - ORIGIN AND APPLICATION TO HIGH-TEMPERATURE DOSIMETRY, Radiation protection dosimetry, 47(1-4), 1993, pp. 147-150
THE LATCHUP RISK OF CMOS-TECHNOLOGY IN SPACE
Authors: MOREAU Y DELAROCHETTE H BRUGUIER G GASIOT J PELANCHON F SUDRE C ECOFFET R
Citation: Y. Moreau et al., THE LATCHUP RISK OF CMOS-TECHNOLOGY IN SPACE, IEEE transactions on nuclear science, 40(6), 1993, pp. 1831-1837
Risultati: 1-25 | 26-26