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Results: 1-25 | 26-26
Results: 1-25/26
WHAT CAN ELECTRON-PARAMAGNETIC-RESONANCE TELL US ABOUT THE SI SIO2 SYSTEM/
Authors: LENAHAN PM CONLEY JF
Citation: Pm. Lenahan et Jf. Conley, WHAT CAN ELECTRON-PARAMAGNETIC-RESONANCE TELL US ABOUT THE SI SIO2 SYSTEM/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2134-2153
RESPONSE TO COMMENT ON A MODEL OF HOLE TRAPPING IN SIO2-FILMS ON SILICON [J. APPL. PHYS. 83, 5591 (1998)]
Authors: LENAHAN PM CONLEY JF
Citation: Pm. Lenahan et Jf. Conley, RESPONSE TO COMMENT ON A MODEL OF HOLE TRAPPING IN SIO2-FILMS ON SILICON [J. APPL. PHYS. 83, 5591 (1998)], Journal of applied physics, 83(10), 1998, pp. 5593-5594
PROCESS INTEGRATION OF AN INTERLEVEL DIELECTRIC (ILDO) MODULE USING ABUILDING-IN RELIABILITY APPROACH
Authors: PAULSEN RE KYONO CS WANG Y KLEIN KM LIM IS TINKLER S BELLAMAK B ODLE DW ZHOU ZX DAHL P GIOVANETTO M MAKWANA J PATEL S RENO C LENAHAN PM BILLMAN CA
Citation: Re. Paulsen et al., PROCESS INTEGRATION OF AN INTERLEVEL DIELECTRIC (ILDO) MODULE USING ABUILDING-IN RELIABILITY APPROACH, I.E.E.E. transactions on electron devices, 45(3), 1998, pp. 655-664
PRELIMINARY INVESTIGATION OF THE KINETICS OF POSTOXIDATION RAPID THERMAL ANNEAL INDUCED HOLE-TRAP-PRECURSOR FORMATION IN MICROELECTRONIC SIO2-FILMS
Authors: CONLEY JF LENAHAN PM MCARTHUR WF
Citation: Jf. Conley et al., PRELIMINARY INVESTIGATION OF THE KINETICS OF POSTOXIDATION RAPID THERMAL ANNEAL INDUCED HOLE-TRAP-PRECURSOR FORMATION IN MICROELECTRONIC SIO2-FILMS, Applied physics letters, 73(15), 1998, pp. 2188-2190
IDENTIFICATION OF THE MICROSCOPIC STRUCTURE OF NEW HOT-CARRIER DAMAGECENTERS IN SHORT-CHANNEL MOSFETS
Authors: BILLMAN CA LENAHAN PM WEBER W
Citation: Ca. Billman et al., IDENTIFICATION OF THE MICROSCOPIC STRUCTURE OF NEW HOT-CARRIER DAMAGECENTERS IN SHORT-CHANNEL MOSFETS, Microelectronic engineering, 36(1-4), 1997, pp. 271-274
A MODEL OF HOLE TRAPPING IN SIO2-FILMS ON SILICON
Authors: LENAHAN PM CONLEY JF WALLACE BD
Citation: Pm. Lenahan et al., A MODEL OF HOLE TRAPPING IN SIO2-FILMS ON SILICON, Journal of applied physics, 81(10), 1997, pp. 6822-6824
QUANTITATIVE MODEL OF RADIATION-INDUCED CHARGE TRAPPING IN SIO2
Authors: CONLEY JF LENAHAN PM WALLACE BD COLE P
Citation: Jf. Conley et al., QUANTITATIVE MODEL OF RADIATION-INDUCED CHARGE TRAPPING IN SIO2, IEEE transactions on nuclear science, 44(6), 1997, pp. 1804-1809
A STUDY OF CHARGE TRAPPING IN PECVD PTEOS FILMS
Authors: LENAHAN PM BILLMAN CA FULLER R EVANS H SPEECE WH DECOSTA D LOWRY R
Citation: Pm. Lenahan et al., A STUDY OF CHARGE TRAPPING IN PECVD PTEOS FILMS, IEEE transactions on nuclear science, 44(6), 1997, pp. 1834-1839
A PHYSICALLY-BASED PREDICTIVE MODEL OF SI SIO2 INTERFACE-TRAP GENERATION RESULTING FROM THE PRESENCE OF HOLES IN THE SIO2/
Authors: LENAHAN PM CONLEY JF
Citation: Pm. Lenahan et Jf. Conley, A PHYSICALLY-BASED PREDICTIVE MODEL OF SI SIO2 INTERFACE-TRAP GENERATION RESULTING FROM THE PRESENCE OF HOLES IN THE SIO2/, Applied physics letters, 71(21), 1997, pp. 3126-3128
ELECTRON-SPIN-RESONANCE CHARACTERIZATION OF TRAPPING CENTERS IN UNIBOND(R) BURIED OXIDES
Authors: CONLEY JF LENAHAN PM WALLACE BD
Citation: Jf. Conley et al., ELECTRON-SPIN-RESONANCE CHARACTERIZATION OF TRAPPING CENTERS IN UNIBOND(R) BURIED OXIDES, IEEE transactions on nuclear science, 43(6), 1996, pp. 2635-2638
HYDROGEN COMPLEXED EP (E'DELTA) CENTERS AND EP H-2 INTERACTIONS - IMPLICATIONS FOR EP STRUCTURE/
Authors: CONLEY JF LENAHAN PM
Citation: Jf. Conley et Pm. Lenahan, HYDROGEN COMPLEXED EP (E'DELTA) CENTERS AND EP H-2 INTERACTIONS - IMPLICATIONS FOR EP STRUCTURE/, Microelectronic engineering, 28(1-4), 1995, pp. 35-38
THE EFFECTS OF THERMAL NITRIDATION AND REOXIDATION ON THE INTERFACIALSTRESS AND STRUCTURE OF SILICON DIOXIDE GATE DIELECTRICS
Authors: YOUNT JT LENAHAN PM WYATT PW
Citation: Jt. Yount et al., THE EFFECTS OF THERMAL NITRIDATION AND REOXIDATION ON THE INTERFACIALSTRESS AND STRUCTURE OF SILICON DIOXIDE GATE DIELECTRICS, Journal of applied physics, 77(2), 1995, pp. 699-705
ELECTRON-SPIN-RESONANCE ANALYSIS OF EP CENTER INTERACTIONS WITH H-2 -EVIDENCE FOR A LOCALIZED EP CENTER STRUCTURE
Authors: CONLEY JF LENAHAN PM
Citation: Jf. Conley et Pm. Lenahan, ELECTRON-SPIN-RESONANCE ANALYSIS OF EP CENTER INTERACTIONS WITH H-2 -EVIDENCE FOR A LOCALIZED EP CENTER STRUCTURE, IEEE transactions on nuclear science, 42(6), 1995, pp. 1740-1743
ELECTRON-SPIN-RESONANCE EVIDENCE THAT E'(GAMMA) CENTERS CAN BEHAVE ASSWITCHING OXIDE TRAPS
Authors: CONLEY JF LENAHAN PM LELIS AJ OLDHAM TR
Citation: Jf. Conley et al., ELECTRON-SPIN-RESONANCE EVIDENCE THAT E'(GAMMA) CENTERS CAN BEHAVE ASSWITCHING OXIDE TRAPS, IEEE transactions on nuclear science, 42(6), 1995, pp. 1744-1749
ELECTRON-SPIN-RESONANCE EVIDENCE FOR THE STRUCTURE OF A SWITCHING OXIDE TRAP - LONG-TERM STRUCTURAL-CHANGE AT SILICON DANGLING BOND SITES IN SIO2
Authors: CONLEY JF LENAHAN PM LELIS AJ OLDHAM TR
Citation: Jf. Conley et al., ELECTRON-SPIN-RESONANCE EVIDENCE FOR THE STRUCTURE OF A SWITCHING OXIDE TRAP - LONG-TERM STRUCTURAL-CHANGE AT SILICON DANGLING BOND SITES IN SIO2, Applied physics letters, 67(15), 1995, pp. 2179-2181
OBSERVATION AND ELECTRONIC CHARACTERIZATION OF NEW E' CENTER DEFECTS IN TECHNOLOGICALLY RELEVANT THERMAL SIO(2) ON SI - AN ADDITIONAL COMPLEXITY IN OXIDE CHARGE TRAPPING
Authors: CONLEY JF LENAHAN PM EVANS HL LOWRY RK MORTHORST TJ
Citation: Jf. Conley et al., OBSERVATION AND ELECTRONIC CHARACTERIZATION OF NEW E' CENTER DEFECTS IN TECHNOLOGICALLY RELEVANT THERMAL SIO(2) ON SI - AN ADDITIONAL COMPLEXITY IN OXIDE CHARGE TRAPPING, Journal of applied physics, 76(5), 1994, pp. 2872-2880
COMPARISON OF DEFECT STRUCTURE IN N2O- AND NH3-NITRIDED OXIDE DIELECTRICS
Authors: YOUNT JT LENAHAN PM KRICK JT
Citation: Jt. Yount et al., COMPARISON OF DEFECT STRUCTURE IN N2O- AND NH3-NITRIDED OXIDE DIELECTRICS, Journal of applied physics, 76(3), 1994, pp. 1754-1758
ELECTRON-SPIN-RESONANCE EVIDENCE FOR AN IMPURITY-RELATED E'-LIKE HOLETRAPPING DEFECT IN THERMALLY GROWN SIO2 ON SI
Authors: CONLEY JF LENAHAN PM EVANS HL LOWRY RK MORTHORST TJ
Citation: Jf. Conley et al., ELECTRON-SPIN-RESONANCE EVIDENCE FOR AN IMPURITY-RELATED E'-LIKE HOLETRAPPING DEFECT IN THERMALLY GROWN SIO2 ON SI, Journal of applied physics, 76(12), 1994, pp. 8186-8188
RADIATION EFFECTS IN OXYNITRIDES GROWN IN N2O
Authors: SAKS NS SIMONS M FLEETWOOD DM YOUNT JT LENAHAN PM KLEIN RB
Citation: Ns. Saks et al., RADIATION EFFECTS IN OXYNITRIDES GROWN IN N2O, IEEE transactions on nuclear science, 41(6), 1994, pp. 1854-1863
OBSERVATION AND ELECTRONIC CHARACTERIZATION OF 2 E' CENTER CHARGE TRAPS IN CONVENTIONALLY PROCESSED THERMAL SIO2 ON SI
Authors: CONLEY JF LENAHAN PM EVANS HL LOWRY RK MORTHORST TJ
Citation: Jf. Conley et al., OBSERVATION AND ELECTRONIC CHARACTERIZATION OF 2 E' CENTER CHARGE TRAPS IN CONVENTIONALLY PROCESSED THERMAL SIO2 ON SI, Applied physics letters, 65(18), 1994, pp. 2281-2283
ELECTRON-SPIN-RESONANCE AND INSTABILITIES IN METAL-INSULATOR-SEMICONDUCTOR SYSTEMS
Authors: LENAHAN PM
Citation: Pm. Lenahan, ELECTRON-SPIN-RESONANCE AND INSTABILITIES IN METAL-INSULATOR-SEMICONDUCTOR SYSTEMS, Microelectronic engineering, 22(1-4), 1993, pp. 129-138
RADIATION-INDUCED INTERFACE STATES AND ESR EVIDENCE FOR ROOM-TEMPERATURE INTERACTIONS BETWEEN MOLECULAR-HYDROGEN AND SILICON DANGLING BONDSIN AMORPHOUS SIO2-FILMS ON SI
Authors: CONLEY JF LENAHAN PM
Citation: Jf. Conley et Pm. Lenahan, RADIATION-INDUCED INTERFACE STATES AND ESR EVIDENCE FOR ROOM-TEMPERATURE INTERACTIONS BETWEEN MOLECULAR-HYDROGEN AND SILICON DANGLING BONDSIN AMORPHOUS SIO2-FILMS ON SI, Microelectronic engineering, 22(1-4), 1993, pp. 215-218
HIGH-RESOLUTION SPIN-DEPENDENT RECOMBINATION STUDY OF HOT-CARRIER DAMAGE IN SHORT-CHANNEL MOSFETS - SI-29 HYPERFINE SPECTRA
Authors: GABRYS JW LENAHAN PM WEBER W
Citation: Jw. Gabrys et al., HIGH-RESOLUTION SPIN-DEPENDENT RECOMBINATION STUDY OF HOT-CARRIER DAMAGE IN SHORT-CHANNEL MOSFETS - SI-29 HYPERFINE SPECTRA, Microelectronic engineering, 22(1-4), 1993, pp. 273-276
BRIDGING NITROGEN DANGLING BOND CENTERS AND ELECTRON TRAPPING IN AMORPHOUS NH3-NITRIDED AND REOXIDIZED NITRIDED-OXIDE FILMS
Authors: YOUNT JT LENAHAN PM
Citation: Jt. Yount et Pm. Lenahan, BRIDGING NITROGEN DANGLING BOND CENTERS AND ELECTRON TRAPPING IN AMORPHOUS NH3-NITRIDED AND REOXIDIZED NITRIDED-OXIDE FILMS, Journal of non-crystalline solids, 166, 1993, pp. 1069-1072
AN ELECTRON-SPIN-RESONANCE STUDY OF THE EFFECTS OF THERMAL NITRIDATION AND REOXIDATION ON P(B) CENTERS AT (111) SI SIO2 INTERFACES/
Authors: YOUNT JT LENAHAN PM WYATT PW
Citation: Jt. Yount et al., AN ELECTRON-SPIN-RESONANCE STUDY OF THE EFFECTS OF THERMAL NITRIDATION AND REOXIDATION ON P(B) CENTERS AT (111) SI SIO2 INTERFACES/, Journal of applied physics, 74(9), 1993, pp. 5867-5870
Risultati: 1-25 | 26-26