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Results: 1-25/28
Authors:
PALANKOVSKI V
KAIBLINGERGRUJIN G
SELBERHERR S
Citation: V. Palankovski et al., IMPLICATIONS OF DOPANT-DEPENDENT LOW-FIELD MOBILITY AND BAND-GAP NARROWING ON THE BIPOLAR DEVICE PERFORMANCE, Journal de physique. IV, 8(P3), 1998, pp. 91-94
Authors:
LEITNER E
SELBERHERR S
Citation: E. Leitner et S. Selberherr, MIXED-ELEMENT DECOMPOSITION METHOD FOR 3-DIMENSIONAL GRID ADAPTATION, IEEE transactions on computer-aided design of integrated circuits and systems, 17(7), 1998, pp. 561-572
Authors:
SCHROM G
STACH A
SELBERHERR S
Citation: G. Schrom et al., AN INTERPOLATION-BASED MOSFET MODEL FOR LOW-VOLTAGE APPLICATIONS, Microelectronics, 29(8), 1998, pp. 529-534
Authors:
KAIBLINGERGRUJIN G
KOSINA H
SELBERHERR S
Citation: G. Kaiblingergrujin et al., INFLUENCE OF THE DOPING ELEMENT ON THE ELECTRON-MOBILITY IN N-SILICON, Journal of applied physics, 83(6), 1998, pp. 3096-3101
Authors:
WASSHUBER C
KOSINA H
SELBERHERR S
Citation: C. Wasshuber et al., A COMPARATIVE-STUDY OF SINGLE-ELECTRON MEMORIES, I.E.E.E. transactions on electron devices, 45(11), 1998, pp. 2365-2371
Authors:
WASSHUBER C
KOSINA H
SELBERHERR S
Citation: C. Wasshuber et al., SIMON - A SIMULATOR FOR SINGLE-ELECTRON TUNNEL DEVICES AND CIRCUITS, IEEE transactions on computer-aided design of integrated circuits and systems, 16(9), 1997, pp. 937-944
Authors:
KIRCHAUER H
SELBERHERR S
Citation: H. Kirchauer et S. Selberherr, RIGOROUS 3-DIMENSIONAL PHOTORESIST EXPOSURE AND DEVELOPMENT SIMULATION OVER NONPLANAR TOPOGRAPHY, IEEE transactions on computer-aided design of integrated circuits and systems, 16(12), 1997, pp. 1431-1438
Authors:
KOPF C
KOSINA H
SELBERHERR S
Citation: C. Kopf et al., PHYSICAL MODELS FOR STRAINED AND RELAXED GAINAS ALLOYS - BAND-STRUCTURE AND LOW-FIELD TRANSPORT, Solid-state electronics, 41(8), 1997, pp. 1139-1152
Authors:
SIMLINGER T
BRECH H
GRAVE T
SELBERHERR S
Citation: T. Simlinger et al., SIMULATION OF SUBMICRON DOUBLE-HETEROJUNCTION HIGH-ELECTRON-MOBILITY TRANSISTORS WITH MINIMOS-NT, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 700-707
Authors:
BRECH H
GRAVE T
SIMLINGER T
SELBERHERR S
Citation: H. Brech et al., OPTIMIZATION OF PSEUDOMORPHIC HEMTS SUPPORTED BY NUMERICAL SIMULATIONS, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 1822-1828
Authors:
KHALIL N
FARICELLI J
HUANG CL
SELBERHERR S
Citation: N. Khalil et al., 2-DIMENSIONAL DOPANT PROFILING OF SUBMICRON METAL-OXIDE-SEMICONDUCTORFIELD-EFFECT TRANSISTOR USING NONLINEAR LEAST-SQUARES INVERSE MODELING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 224-230
Authors:
SCHROM G
PICHLER C
SIMLINGER T
SELBERHERR S
Citation: G. Schrom et al., ON THE LOWER BOUNDS OF CMOS SUPPLY VOLTAGE, Solid-state electronics, 39(4), 1996, pp. 425-430
Authors:
BOHMAYR W
BURENKOV A
LORENZ J
RYSSEL H
SELBERHERR S
Citation: W. Bohmayr et al., TRAJECTORY SPLIT METHOD FOR MONTE-CARLO SIMULATION OF ION-IMPLANTATION, IEEE transactions on semiconductor manufacturing, 8(4), 1995, pp. 402-407
Authors:
KHALIL N
FARICELLI J
BELL D
SELBERHERR S
Citation: N. Khalil et al., THE EXTRACTION OF 2-DIMENSIONAL MOS-TRANSISTOR DOPING VIA INVERSE MODELING, IEEE electron device letters, 16(1), 1995, pp. 17-19
Authors:
STRASSER E
SELBERHERR S
Citation: E. Strasser et S. Selberherr, ALGORITHMS AND MODELS FOR CELLULAR BASED TOPOGRAPHY SIMULATION, IEEE transactions on computer-aided design of integrated circuits and systems, 14(9), 1995, pp. 1104-1114
Authors:
HALAMA S
PICHLER C
RIEGER G
SCHROM G
SIMLINGER T
SELBERHERR S
Citation: S. Halama et al., VISTA - USER-INTERFACE, TASK LEVEL, AND TOOL INTEGRATION, IEEE transactions on computer-aided design of integrated circuits and systems, 14(10), 1995, pp. 1208-1222
Authors:
HALAMA S
FASCHING F
FISCHER C
KOSINA H
LEITNER E
LINDORFER P
PICHLER C
PIMINGSTORFER H
PUCHNER H
RIEGER G
SCHROM G
SIMLINGER T
STIFTINGER M
STIPPEL H
STRASSER E
TUPPA W
WIMMER K
SELBERHERR S
Citation: S. Halama et al., THE VIENNESE INTEGRATED SYSTEM FOR TECHNOLOGY CAD APPLICATIONS, Microelectronics, 26(2-3), 1995, pp. 137-158
Authors:
STIPPEL H
LEITNER E
PICHLER C
PUCHNER H
STRASSER E
SELBERHERR S
Citation: H. Stippel et al., PROCESS SIMULATION FOR THE 1990S, Microelectronics, 26(2-3), 1995, pp. 203-215
Authors:
KOSINA H
LANGER E
SELBERHERR S
Citation: H. Kosina et al., DEVICE MODELING FOR THE 1990S, Microelectronics, 26(2-3), 1995, pp. 217-233
Authors:
BRAND H
SELBERHERR S
Citation: H. Brand et S. Selberherr, 2-DIMENSIONAL SIMULATION OF THERMAL RUNAWAY IN A NONPLANAR GTO-THYRISTOR, I.E.E.E. transactions on electron devices, 42(12), 1995, pp. 2137-2146
Authors:
PUCHNER H
SELBERHERR S
Citation: H. Puchner et S. Selberherr, AN ADVANCED MODEL FOR DOPANT DIFFUSION IN POLYSILICON, I.E.E.E. transactions on electron devices, 42(10), 1995, pp. 1750-1755
Authors:
STRASSER E
SCHROM G
WIMMER K
SELBERHERR S
Citation: E. Strasser et al., ACCURATE SIMULATION OF PATTERN TRANSFER PROCESSES USING MINKOWSKI OPERATIONS, IEICE transactions on electronics, E77C(2), 1994, pp. 92-97
Authors:
STIPPEL H
SELBERHERR S
Citation: H. Stippel et S. Selberherr, MONTE-CARLO SIMULATION OF ION-IMPLANTATION FOR 3-DIMENSIONAL STRUCTURES USING AN OCTREE, IEICE transactions on electronics, E77C(2), 1994, pp. 118-123
Authors:
BRAND H
SELBERHERR S
Citation: H. Brand et S. Selberherr, ELECTROTHERMAL ANALYSIS OF LATCH-UP IN AN INSULATED GATE TRANSISTOR (IGT), IEICE transactions on electronics, E77C(2), 1994, pp. 179-186
Authors:
KOSINA H
SELBERHERR S
Citation: H. Kosina et S. Selberherr, A HYBRID DEVICE SIMULATOR THAT COMBINES MONTE-CARLO AND DRIFT-DIFFUSION ANALYSIS, IEEE transactions on computer-aided design of integrated circuits and systems, 13(2), 1994, pp. 201-210