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Results: 1-17 |
Results: 17
AC FLOATING-BODY EFFECTS IN SUBMICRON FULLY DEPLETED (FD) SOI NMOSFETS AND THE IMPACT ON ANALOG APPLICATIONS
Authors: TSENG YC HUANG WM DIAZ DC FORD JM WOO JCS
Citation: Yc. Tseng et al., AC FLOATING-BODY EFFECTS IN SUBMICRON FULLY DEPLETED (FD) SOI NMOSFETS AND THE IMPACT ON ANALOG APPLICATIONS, IEEE electron device letters, 19(9), 1998, pp. 351-353
EMPIRICAL CORRELATION BETWEEN AC KINK AND LOW-FREQUENCY NOISE OVERSHOOT IN SOI MOSFETS
Authors: TSENG YC HUANG WLM WELCH PJ FORD JM WOO JCS
Citation: Yc. Tseng et al., EMPIRICAL CORRELATION BETWEEN AC KINK AND LOW-FREQUENCY NOISE OVERSHOOT IN SOI MOSFETS, IEEE electron device letters, 19(5), 1998, pp. 157-159
A LOW THERMAL BUDGET SELF-ALIGNED TI SILICIDE TECHNOLOGY USING GERMANIUM IMPLANTATION FOR THIN-FILM SOI MOSFETS
Authors: LIU P HSIAO TC WOO JCS
Citation: P. Liu et al., A LOW THERMAL BUDGET SELF-ALIGNED TI SILICIDE TECHNOLOGY USING GERMANIUM IMPLANTATION FOR THIN-FILM SOI MOSFETS, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1280-1286
ADVANCED TECHNOLOGIES FOR OPTIMIZED SUB-QUARTER-MICROMETER SOI CMOS DEVICES
Authors: HSIAO TC LIU P WOO JCS
Citation: Tc. Hsiao et al., ADVANCED TECHNOLOGIES FOR OPTIMIZED SUB-QUARTER-MICROMETER SOI CMOS DEVICES, I.E.E.E. transactions on electron devices, 45(5), 1998, pp. 1092-1098
AN ADVANCED GE PREAMORPHIZATION SALICIDE TECHNOLOGY FOR ULTRA-THIN-FILM SOI CMOS DEVICES
Authors: HSIAO TC LIU P WOO JCS
Citation: Tc. Hsiao et al., AN ADVANCED GE PREAMORPHIZATION SALICIDE TECHNOLOGY FOR ULTRA-THIN-FILM SOI CMOS DEVICES, IEEE electron device letters, 18(7), 1997, pp. 309-311
TUNNELING SOURCE-BODY CONTACT FOR PARTIALLY-DEPLETED SOI MOSFET
Authors: CHEN VMC WOO JCS
Citation: Vmc. Chen et Jcs. Woo, TUNNELING SOURCE-BODY CONTACT FOR PARTIALLY-DEPLETED SOI MOSFET, I.E.E.E. transactions on electron devices, 44(7), 1997, pp. 1143-1147
COMPARISON OF NMOS AND PMOS HOT-CARRIER EFFECTS FROM 300 TO 77 K
Authors: SONG M MACWILLIAMS KP WOO JCS
Citation: M. Song et al., COMPARISON OF NMOS AND PMOS HOT-CARRIER EFFECTS FROM 300 TO 77 K, I.E.E.E. transactions on electron devices, 44(2), 1997, pp. 268-276
HOLE CONFINEMENT IN A SI GESI/SI QUANTUM-WELL ON SIMOX/
Authors: NAYAK DK WOO JCS PARK JS WANG KL MACWILLIAMS KP
Citation: Dk. Nayak et al., HOLE CONFINEMENT IN A SI GESI/SI QUANTUM-WELL ON SIMOX/, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 180-182
TEMPERATURE AND ELECTRIC-FIELD CHARACTERISTICS OF TIME-DEPENDENT DIELECTRIC-BREAKDOWN FOR SILICON DIOXIDE AND REOXIDIZED-NITRIDED OXIDES
Authors: LIN CH CABLE J WOO JCS
Citation: Ch. Lin et al., TEMPERATURE AND ELECTRIC-FIELD CHARACTERISTICS OF TIME-DEPENDENT DIELECTRIC-BREAKDOWN FOR SILICON DIOXIDE AND REOXIDIZED-NITRIDED OXIDES, I.E.E.E. transactions on electron devices, 42(7), 1995, pp. 1329-1332
SUBTHRESHOLD CHARACTERISTICS OF FULLY DEPLETED SUBMICROMETER SOI MOSFETS
Authors: HSIAO TC WOO JCS
Citation: Tc. Hsiao et Jcs. Woo, SUBTHRESHOLD CHARACTERISTICS OF FULLY DEPLETED SUBMICROMETER SOI MOSFETS, I.E.E.E. transactions on electron devices, 42(6), 1995, pp. 1120-1125
EXTRACTION OF GATE DEPENDENT SOURCE DRAIN RESISTANCE AND EFFECTIVE CHANNEL-LENGTH IN MOS DEVICES AT 77 K
Authors: HWANG CY KUO TC WOO JCS
Citation: Cy. Hwang et al., EXTRACTION OF GATE DEPENDENT SOURCE DRAIN RESISTANCE AND EFFECTIVE CHANNEL-LENGTH IN MOS DEVICES AT 77 K, I.E.E.E. transactions on electron devices, 42(10), 1995, pp. 1863-1865
HIGH-MOBILITY P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR ON STRAINED SI
Authors: NAYAK DK WOO JCS PARK JS WANG KL MACWILLIAMS KP
Citation: Dk. Nayak et al., HIGH-MOBILITY P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR ON STRAINED SI, JPN J A P 1, 33(4B), 1994, pp. 2412-2414
MODELING THE IV CHARACTERISTICS OF FULLY DEPLETED SUBMICROMETER SOI MOSFETS
Authors: HSIAO TC KISTLER NA WOO JCS
Citation: Tc. Hsiao et al., MODELING THE IV CHARACTERISTICS OF FULLY DEPLETED SUBMICROMETER SOI MOSFETS, IEEE electron device letters, 15(2), 1994, pp. 45-47
SHALLOW BURIED-CHANNEL GATED BJT ON TFSOI SUBSTRATE
Authors: CHEN VMC WOO JCS
Citation: Vmc. Chen et Jcs. Woo, SHALLOW BURIED-CHANNEL GATED BJT ON TFSOI SUBSTRATE, IEEE electron device letters, 15(10), 1994, pp. 391-393
INTERFACE PROPERTIES OF THIN OXIDES GROWN ON STRAINED GEXSI1-X LAYER
Authors: NAYAK DK PARK JS WOO JCS WANG KL IVANOV IC
Citation: Dk. Nayak et al., INTERFACE PROPERTIES OF THIN OXIDES GROWN ON STRAINED GEXSI1-X LAYER, Journal of applied physics, 76(2), 1994, pp. 982-986
HIGH-MOBILITY GESI PMOS ON SIMOX
Authors: NAYAK DK WOO JCS YABIKU GK MACWILLIAMS KP PARK JS WANG KL
Citation: Dk. Nayak et al., HIGH-MOBILITY GESI PMOS ON SIMOX, IEEE electron device letters, 14(11), 1993, pp. 520-522
HIGH-MOBILITY P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR ON STRAINED SI
Authors: NAYAK DK WOO JCS PARK JS WANG KL MACWILLIAMS KP
Citation: Dk. Nayak et al., HIGH-MOBILITY P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR ON STRAINED SI, Applied physics letters, 62(22), 1993, pp. 2853-2855
Risultati: 1-17 |