Citation: Ss. Park et al., CHARACTERIZATION OF PB1-XLAXTIO3 THIN-FILMS BY THE RADIO-FREQUENCY MAGNETRON SPUTTERING TECHNIQUE, JPN J A P 1, 37(4A), 1998, pp. 1955-1959
Authors:
YANG CH
SHIN WC
CHOI ES
HWANG JS
YOON SG
CHOI WY
KIM HG
Citation: Ch. Yang et al., FERROELECTRIC PROPERTIES OF SRBI2TA2O9 THIN-FILMS DEPOSITED ON VARIOUS BOTTOM ELECTRODES BY A MODIFIED RADIOFREQUENCY MAGNETRON SPUTTERING TECHNIQUE, JPN J A P 1, 37(10), 1998, pp. 5549-5553
Authors:
AHN JH
CHOI GP
CHOI WY
LEE WJ
YOON SG
KIM HG
Citation: Jh. Ahn et al., EFFECTS OF BOTTOM ELECTRODES ON THE LEAKAGE PROPERTIES OF SPUTTERED BST THIN-FILMS, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 185-195
Citation: Nj. Seong et Sg. Yoon, EFFECT OF 2ND-PHASE ON THE ELECTRICAL-PROPERTIES OF SRBI2TA2O9 (SBT) THIN-FILMS DEPOSITED AT 550-DEGREES-C BY PEMOCVD, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 207-215
Citation: Wc. Shin et al., PREPARATION OF FERROELECTRIC YMNO3 THIN-FILMS FOR NONVOLATILE MEMORY DEVICES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 319-329
Citation: Ch. Yang et Sg. Yoon, EFFECT OF BISMUTH ON THE FERROELECTRIC PROPERTIES OF SRBI2TA2O9 THIN-FILMS DEPOSITED ON PT SIO2/SI BY A MODIFIED RADIOFREQUENCY MAGNETRON SPUTTERING TECHNIQUE/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2505-2509
Citation: Nj. Seong et al., CHARACTERIZATION OF C-AXIS ORIENTED SRBI2TA2O9 FERROELECTRIC THIN-FILMS DEPOSITED BY PLASMA-ENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITIONON MOCVD-PT SIO2/SI/, Journal of the Korean Physical Society, 32, 1998, pp. 1691-1693
Citation: Ch. Yang et al., TEMPERATURE-DEPENDENCE OF THE ELECTRICAL-PROPERTIES OF SRBI2TA2O9 THIN-FILMS DEPOSITED BY RADIOFREQUENCY MAGNETRON SPUTTERING, Journal of the Electrochemical Society, 145(4), 1998, pp. 1330-1334
Citation: Nj. Seong et al., OXIDE INTERFACIAL PHASES AND THE ELECTRICAL-PROPERTIES OF SRBI2TA2O9 THIN-FILMS PREPARED BY PLASMA-ENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 72(11), 1998, pp. 1374-1376
Citation: Wc. Shin et al., EFFECT OF ANNEALING CONDITIONS ON THE MICROSTRUCTURE OF RUO2 THIN-FILMS DEPOSITED BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Integrated ferroelectrics, 18(1-4), 1997, pp. 171-182
Citation: Ch. Yang et al., ELECTRICAL-PROPERTIES OF SRBI2TA2O9 THIN-FILMS DEPOSITED BY RF MAGNETRON SPUTTERING, Integrated ferroelectrics, 18(1-4), 1997, pp. 377-387
Citation: Nk. Kim et al., EFFECTS OF SRF2 PHASE ON ELECTRICAL-PROPERTIES OF SRTIO3 THIN-FILMS DEPOSITED BY PLASMA-ENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Integrated ferroelectrics, 14(1-4), 1997, pp. 105-113
Citation: Nk. Kim et al., ELECTRICAL AND STRUCTURAL-PROPERTIES OF SRTIO3 THIN-FILMS DEPOSITED BY PLASMA-ENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of materials research, 12(4), 1997, pp. 1160-1164
Citation: Jh. Kwon et Sg. Yoon, PREPARATION OF PT THIN-FILMS DEPOSITED BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION FOR FERROELECTRIC THIN-FILMS, Thin solid films, 303(1-2), 1997, pp. 136-142
Citation: Jh. Kwon et Sg. Yoon, CHARACTERIZATION OF PT THIN-FILMS DEPOSITED BY METALLORGANIC CHEMICAL-VAPOR-DEPOSITION FOR FERROELECTRIC BOTTOM ELECTRODES, Journal of the Electrochemical Society, 144(8), 1997, pp. 2848-2854
Citation: Ss. Park et al., CHARACTERIZATION OF FERROELECTRIC SRBI2TA2O9 THIN-FILMS DEPOSITED BY A RADIO-FREQUENCY MAGNETRON SPUTTERING TECHNIQUE, Journal of the Electrochemical Society, 144(8), 1997, pp. 2855-2858
Citation: Wc. Shin et Sg. Yoon, CHARACTERIZATION OF RUO2 THIN-FILMS PREPARED BY HOT-WALL METALLORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of the Electrochemical Society, 144(3), 1997, pp. 1055-1060
Citation: Nj. Seong et al., CHARACTERIZATION OF SRBI2TA2O9 FERROELECTRIC THIN-FILMS DEPOSITED AT LOW-TEMPERATURES BY PLASMA-ENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 71(1), 1997, pp. 81-83
Citation: Wj. Lee et al., MICROSTRUCTURE DEPENDENCE OF ELECTRICAL-PROPERTIES OF (BA0.5SR0.5)TIO3 THIN-FILMS DEPOSITED ON PT SIO2/SI/, Journal of applied physics, 80(10), 1996, pp. 5891-5894
Citation: Sg. Yoon et al., CHARACTERIZATION OF (BA-0.5,SR-0.5)TIO3 THIN-FILMS BY THE LASER-ABLATION TECHNIQUE AND THEIR ELECTRICAL-PROPERTIES WITH DIFFERENT ELECTRODES, Integrated ferroelectrics, 7(1-4), 1995, pp. 329-339
Citation: Sj. Chae et al., CHARACTERIZATION OF (PB1-XLAX)TIO3 THIN-FILMS GROWN BY RADIO - FREQUENCY MAGNETRON SPUTTERING AND THEIR ELECTRICAL-PROPERTIES, Integrated ferroelectrics, 10(1-4), 1995, pp. 63-72
Citation: Sg. Yoon et A. Safari, (BA0.5,SR0.5)TIO3, THIN-FILM PREPARATION BY RF MAGNETRON SPUTTERING AND ITS ELECTRIC PROPERTIES, Thin solid films, 254(1-2), 1995, pp. 211-215
Citation: Sg. Yoon et al., PREPARATION OF THIN-FILM (BA0.5,SR0.5)TIO3 BY THE LASER-ABLATION TECHNIQUE AND ELECTRICAL-PROPERTIES, Journal of applied physics, 76(5), 1994, pp. 2999-3003
Citation: Et. Kim et Sg. Yoon, CHARACTERIZATION OF ZIRCONIUM DIOXIDE FILM FORMED BY PLASMA-ENHANCED METAL-ORGANIC CHEMICAL-VAPOR DEPOSITION, Thin solid films, 227(1), 1993, pp. 7-12