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Results:
1-23
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Results: 23
Authors:
WANG ZL
ZHAO QT
LI MY
GONG XJ
Citation: Zl. Wang et al., EFFECTS OF MEV SI ION IRRADIATION ON THE PROPERTIES OF SHALLOW P+N JUNCTIONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 135(1-4), 1998, pp. 280-284
Authors:
LI MY
WANG ZL
FAN SS
ZHAO QT
XIONG GC
Citation: My. Li et al., STRUCTURAL CHARACTERISTICS AND THE CONTROL OF CRYSTALLOGRAPHIC ORIENTATION OF CEO2 THIN-FILMS PREPARED BY LASER-ABLATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 135(1-4), 1998, pp. 535-539
Authors:
LI MY
WANG ZL
FAN SS
ZHAO QT
XIONG GC
Citation: My. Li et al., INFLUENCES OF SUBSTRATES AND SUBSTRATE TEMPERATURES ON CHARACTERISTICS OF EPITAXIAL LA0.5SR0.5COO3 THIN-FILMS, Thin solid films, 323(1-2), 1998, pp. 304-308
Authors:
LI MY
WANG ZL
FAN SS
ZHAO QT
XIONG GC
CHEN HC
LIU ZG
Citation: My. Li et al., GROWTH OF FERROELECTRIC (K0.5NA0.5)(0.2)(SR0.75BA0.25)(0.9)NB2O6 THIN-FILMS BY PULSED-LASER DEPOSITION, Solid state communications, 103(5), 1997, pp. 285-289
Authors:
WANG ZL
ZHAO QT
WANG KM
SHI BR
Citation: Zl. Wang et al., ION-BEAM DEFECT ENGINEERING IN SEMICONDUCTORS AND OPTOELECTRIC MATERIALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 115(1-4), 1996, pp. 421-429
Authors:
ZHAO QT
WANG ZL
Citation: Qt. Zhao et Zl. Wang, REDUCTION OF SECONDARY DEFECTS IN 50 KEV P-IMPLANTED SI(100) BY MEV SI ION IRRADIATION(), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 108(1-2), 1996, pp. 81-84
Authors:
XU TB
ZHU PR
ZHOU JS
LI DQ
REN TQ
ZHAO QT
LIU XD
LIU JT
Citation: Tb. Xu et al., ION-BEAM-INDUCED SOLID-PHASE CRYSTALLIZATION OF MEV SI-IMPLANTED SI(100)(), Acta physica Sinica, 4(2), 1995, pp. 118-124
Authors:
WANG ZL
ITOH N
MATSUNAMI N
ZHAO QT
Citation: Zl. Wang et al., ION-INDUCED CRYSTALLIZATION AND AMORPHIZATION AT CRYSTAL AMORPHOUS INTERFACES OF SILICON/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 100(4), 1995, pp. 493-501
Authors:
WANG KM
QU BD
SHI BR
ZHAI HY
MA SJ
XU TB
ZHU PR
ZHAO QT
Citation: Km. Wang et al., LONGITUDINAL AND TRANSVERSE MOMENTS OF THE DISTRIBUTION OF MEV TI IONS IMPLANTED IN SI MEASURED BY SIMS, Journal of physics. D, Applied physics, 28(6), 1995, pp. 1158-1161
Authors:
ZHAO QT
WANG ZL
CAO YM
XU TB
ZHU PR
Citation: Qt. Zhao et al., GETTERING EFFECTS IN BF2-IMPLANTED SI(100) BY ION-BEAM DEFECT ENGINEERING, Journal of applied physics, 77(10), 1995, pp. 5014-5019
Authors:
WANG KM
SHI BR
MA SJ
LIU XD
ZHAI HY
XU TB
ZHU PR
ZHAO QT
Citation: Km. Wang et al., DAMAGE BEHAVIOR OF SILICON BY MEV GE+ IRRADIATION UNDER TILTED ANGLE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(5), 1994, pp. 3027-3030
Authors:
ZHAO QT
WANG KM
LIU JT
LIU XD
DENG SM
LIN J
YA KJ
Citation: Qt. Zhao et al., RANGE PROFILES OF IMPLANTED ARGON IONS IN POLYMERS, Radiation effects and defects in solids, 128(4), 1994, pp. 287-293
Authors:
XU TB
ZHU PR
ZHOU JS
LI DQ
GONG B
WAN Y
MU SM
ZHAO QT
WANG ZL
Citation: Tb. Xu et al., RBS STUDIES OF THE LATTICE DAMAGE CAUSED BY 1 MEV SI+ IMPLANTATION INTO AL0.3GA0.7AS GAAS SUPERLATTICES AT ELEVATED-TEMPERATURE/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 90(1-4), 1994, pp. 392-395
Authors:
ZHAO QT
WANG ZL
XU TB
ZHU PR
ZHOU JS
Citation: Qt. Zhao et al., DAMAGE ACCUMULATION AND AMORPHIZATION IN GAAS BY MEV SI-IMPLANTATION AT DIFFERENT TILT ANGLES( ION), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 90(1-4), 1994, pp. 415-418
Authors:
WANG KM
SHI BR
WANG ZL
LIU XD
LIU YG
ZHAO QT
Citation: Km. Wang et al., CHANNELING STUDY ON DAMAGE IN POTASSIUM TITANYL PHOSPHATE INDUCED BY ION IRRADIATION, Physical review. B, Condensed matter, 50(2), 1994, pp. 770-776
Authors:
WANG KM
SHI BR
MA SJ
LIU XD
ZHAI HY
XU TB
ZHU PR
ZHAO QT
Citation: Km. Wang et al., INVESTIGATION OF DEPTH DISTRIBUTIONS OF DEFECTS IN SI CREATED BY HIGH-ENERGY TI IONS, Vacuum, 45(9), 1994, pp. 955-958
Authors:
WANG KM
SHI BR
LIU XD
MA SJ
XU TB
ZHU PR
ZHAO QT
Citation: Km. Wang et al., DECHANNELING ANALYSIS OF DAMAGE IN SI CREATED BY MEV TI IONS, Journal of physics. D, Applied physics, 27(3), 1994, pp. 571-573
Authors:
WANG KM
SHI BR
WANG ZL
LIU XD
MA SJ
XU TB
ZHU PR
ZHAO QT
Citation: Km. Wang et al., DAMAGE PROFILES IN SILICON TILT ANGLES BOMBARDED BY HIGH-ENERGY CU IONS, Journal of applied physics, 76(6), 1994, pp. 3357-3361
Authors:
ZHAO QT
WANG ZI
XU TB
ZHU PR
ZHOU JS
Citation: Qt. Zhao et al., REDUCTION OF SECONDARY DEFECTS IN BF, IMPLANTED SI(100) BY ION-BEAM DEFECT ENGINEERING, Applied physics letters, 64(2), 1994, pp. 175-177
Authors:
ZHAO QT
WANG ZL
XU TB
ZHU PR
ZHOU JS
LIU XD
LIU JT
WANG KM
Citation: Qt. Zhao et al., DAMAGE FORMATION IN SI(100) INDUCED BY MEV SELF-ION IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 82(4), 1993, pp. 575-578
Authors:
WANG KM
WANG ZL
SHI BR
QU BD
LIU XD
LIU JT
ZHAO QT
Citation: Km. Wang et al., 2-DIMENSIONAL DISTRIBUTIONS OF XE IONS IMPLANTED IN SI3N4 FILMS, Vacuum, 44(10), 1993, pp. 1045-1048
Authors:
WANG KM
SHI BR
QU BD
WANG ZL
LIU XD
LIU YG
ZHAO QT
Citation: Km. Wang et al., INVESTIGATION OF LATERAL STRAGGLING OF XE IONS IN POTASSIUM TITANYL PHOSPHATE, Journal of applied physics, 73(11), 1993, pp. 7222-7224
Authors:
ZHAO QT
WANG ZL
XU TB
ZHU PR
ZHOU JS
Citation: Qt. Zhao et al., EFFECTS OF ION-BEAM DEFECT ENGINEERING ON CARRIER CONCENTRATION PROFILES IN 50-KEV P-IMPLANTED SI(100)(), Applied physics letters, 62(24), 1993, pp. 3183-3185
Risultati:
1-23
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