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Results: 1-21 |
Results: 21
DEFECTS AND SHORT-RANGE AND MEDIUM-RANGE ORDER IN THE STRUCTURAL NETWORK OF HYDROGENATED AMORPHOUS-SILICON
Authors: GOLIKOVA OA KUDOYAROVA VK
Citation: Oa. Golikova et Vk. Kudoyarova, DEFECTS AND SHORT-RANGE AND MEDIUM-RANGE ORDER IN THE STRUCTURAL NETWORK OF HYDROGENATED AMORPHOUS-SILICON, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 779-781
STAEBLER-WRONSKI EFFECT AS A FUNCTION OF THE FERMI-LEVEL POSITION ANDSTRUCTURE OF NONDOPED, AMORPHOUS, HYDRATED SILICON
Authors: GOLIKOVA OA KAZANIN MM KUDOYAROVA VK
Citation: Oa. Golikova et al., STAEBLER-WRONSKI EFFECT AS A FUNCTION OF THE FERMI-LEVEL POSITION ANDSTRUCTURE OF NONDOPED, AMORPHOUS, HYDRATED SILICON, Semiconductors, 32(4), 1998, pp. 434-438
EFFECT OF THE CHARGE-STATE OF DEFECTS ON THE LIGHT-INDUCED KINETICS OF THE PHOTOCONDUCTIVITY OF AMORPHOUS HYDRATED SILICON
Authors: GOLIKOVA OA
Citation: Oa. Golikova, EFFECT OF THE CHARGE-STATE OF DEFECTS ON THE LIGHT-INDUCED KINETICS OF THE PHOTOCONDUCTIVITY OF AMORPHOUS HYDRATED SILICON, Semiconductors, 32(3), 1998, pp. 312-315
RELAXATION OF PHOTOINDUCED METASTABLE STATES IN A-SI-H FILMS DEPOSITED AT HIGH-TEMPERATURES
Authors: KUROVA IA ORMONT NN GOLIKOVA OA KAZANIN MM
Citation: Ia. Kurova et al., RELAXATION OF PHOTOINDUCED METASTABLE STATES IN A-SI-H FILMS DEPOSITED AT HIGH-TEMPERATURES, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1134-1136
RELATION BETWEEN THE OPTOELECTRONIC PARAMETERS OF AMORPHOUS HYDROGENATED SILICON FILMS DEPOSITED AT HIGH-TEMPERATURES AND THEIR MICROSTRUCTURE
Authors: ADRIAENSSENS GJ GREVENDONK W GOLIKOVA OA
Citation: Gj. Adriaenssens et al., RELATION BETWEEN THE OPTOELECTRONIC PARAMETERS OF AMORPHOUS HYDROGENATED SILICON FILMS DEPOSITED AT HIGH-TEMPERATURES AND THEIR MICROSTRUCTURE, Semiconductors, 32(1), 1998, pp. 109-111
CHARACTERISTIC STRUCTURAL FEATURES OF AMORPHOUS HYDRATED SILICON FILMS DEPOSITED BY DIRECT-CURRENT DECOMPOSITION OF SILANE IN A MAGNETIC-FIELD
Authors: GOLIKOVA OA KUZNETSOV AN KUDOYAROVA VK KAZANIN MM
Citation: Oa. Golikova et al., CHARACTERISTIC STRUCTURAL FEATURES OF AMORPHOUS HYDRATED SILICON FILMS DEPOSITED BY DIRECT-CURRENT DECOMPOSITION OF SILANE IN A MAGNETIC-FIELD, Semiconductors, 31(7), 1997, pp. 691-694
ON THE RELAXATIONAL CHARACTERISTICS AND STABILITY OF A SI-H FILMS GROWN AT HIGH-TEMPERATURES
Authors: KUROVA IA ORMONT NN GOLIKOVA OA KUDOYAROVA VK
Citation: Ia. Kurova et al., ON THE RELAXATIONAL CHARACTERISTICS AND STABILITY OF A SI-H FILMS GROWN AT HIGH-TEMPERATURES, Semiconductors, 31(5), 1997, pp. 452-454
DEFECTS IN INTRINSIC AND PSEUDODOPED AMORPHOUS HYDRATED SILICON
Authors: GOLIKOVA OA
Citation: Oa. Golikova, DEFECTS IN INTRINSIC AND PSEUDODOPED AMORPHOUS HYDRATED SILICON, Semiconductors, 31(3), 1997, pp. 228-231
AMORPHOUS HYDRATED SILICON FILMS DEPOSITED AT ELEVATED-TEMPERATURES
Authors: GOLIKOVA OA KAZANIN MM KONKOV OI KUDOYAROVA VK TERUKOV EI
Citation: Oa. Golikova et al., AMORPHOUS HYDRATED SILICON FILMS DEPOSITED AT ELEVATED-TEMPERATURES, Semiconductors, 30(3), 1996, pp. 226-230
A-SI-H FILMS FABRICATED AT ELEVATED-TEMPERATURES BY DIRECT-CURRENT, MAGNETRON-ASSISTED SILANE DECOMPOSITION
Authors: GOLIKOVA OA KUZNETSOV AN KUDOYAROVA VK KAZANIN MM
Citation: Oa. Golikova et al., A-SI-H FILMS FABRICATED AT ELEVATED-TEMPERATURES BY DIRECT-CURRENT, MAGNETRON-ASSISTED SILANE DECOMPOSITION, Semiconductors, 30(10), 1996, pp. 983-985
STRUCTURAL NETWORK AND FERMI-LEVEL OF PSEUDODOPED AMORPHOUS HYDROGENATED SILICON
Authors: GOLIKOVA OA KUDOYAROVA VK
Citation: Oa. Golikova et Vk. Kudoyarova, STRUCTURAL NETWORK AND FERMI-LEVEL OF PSEUDODOPED AMORPHOUS HYDROGENATED SILICON, Semiconductors, 29(6), 1995, pp. 584-587
EFFECT OF SI+ IMPLANTATION ON THE PROPERTIES OF AMORPHOUS HYDROGENATED SILICON
Authors: GOLIKOVA OA MAVLYANOV KY PETROV IN YAFAEV RR
Citation: Oa. Golikova et al., EFFECT OF SI+ IMPLANTATION ON THE PROPERTIES OF AMORPHOUS HYDROGENATED SILICON, Semiconductors, 29(4), 1995, pp. 299-301
PSEUDODOPED AMORPHOUS-SILICON AS A MATERIAL FOR VIDICON TARGETS
Authors: GOLIKOVA OA KAZANIN MM PETROV IN
Citation: Oa. Golikova et al., PSEUDODOPED AMORPHOUS-SILICON AS A MATERIAL FOR VIDICON TARGETS, Semiconductors, 28(9), 1994, pp. 887-889
PSEUDODOPING AND ANNEALING OF AMORPHOUS HYDROGENATED SILICON
Authors: GOLIKOVA OA KAZANIN MM MAVLYANOV KY
Citation: Oa. Golikova et al., PSEUDODOPING AND ANNEALING OF AMORPHOUS HYDROGENATED SILICON, Semiconductors, 28(8), 1994, pp. 752-754
DEFECTS IN BORON-DOPED AMORPHOUS-SILICON
Authors: GOLIKOVA OA DOMASHEVSKAYA EP KAZANIN MM MAVLYANOV KY TEREKHOV VA
Citation: Oa. Golikova et al., DEFECTS IN BORON-DOPED AMORPHOUS-SILICON, Semiconductors, 28(7), 1994, pp. 697-699
HIGH-BORON COMPOUNDS - PHASES OF VARIABLE COMPOSITION
Authors: GOLIKOVA OA
Citation: Oa. Golikova, HIGH-BORON COMPOUNDS - PHASES OF VARIABLE COMPOSITION, Semiconductors, 28(6), 1994, pp. 580-583
FERMI-LEVEL SHIFTS AND ELECTRICAL-TRANSPORT PARAMETERS IN AMORPHOUS HYDROGENATED SILICON
Authors: GOLIKOVA OA
Citation: Oa. Golikova, FERMI-LEVEL SHIFTS AND ELECTRICAL-TRANSPORT PARAMETERS IN AMORPHOUS HYDROGENATED SILICON, Semiconductors, 28(11), 1994, pp. 1083-1086
DENSITY OF DEFECTS IN THE SURFACE PARTS OF HYDROGENATED AMORPHOUS-SILICON FILMS
Authors: GOLIKOVA OA DOMASHEVSKAYA EP MAVLYANOV KY TEREKHOV VA TROSTYANSKII SN
Citation: Oa. Golikova et al., DENSITY OF DEFECTS IN THE SURFACE PARTS OF HYDROGENATED AMORPHOUS-SILICON FILMS, Semiconductors, 27(9), 1993, pp. 811-813
DENSITY OF ELECTRON-STATES OF INTRINSIC HYDROGENATED AMORPHOUS-SILICON
Authors: GOLIKOVA OA IKRAMOV RG KAZANIN MM MEZDROGINA MM
Citation: Oa. Golikova et al., DENSITY OF ELECTRON-STATES OF INTRINSIC HYDROGENATED AMORPHOUS-SILICON, Semiconductors, 27(3), 1993, pp. 260-262
PHOTOINDUCED DEFECTS IN PSEUDODOPED A-SIH
Authors: GOLIKOVA OA IKRAMOV RG KAZANIN MM MEZDROGINA MM
Citation: Oa. Golikova et al., PHOTOINDUCED DEFECTS IN PSEUDODOPED A-SIH, Semiconductors, 27(3), 1993, pp. 265-267
LIGHT-INDUCED DEFECTS IN A-SI-H
Authors: GOLIKOVA OA KAZANIN MM IKRAMOV RG
Citation: Oa. Golikova et al., LIGHT-INDUCED DEFECTS IN A-SI-H, Journal of non-crystalline solids, 166, 1993, pp. 395-397
Risultati: 1-21 |