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Results: 1-25 | 26-43
Results: 1-25/43
COMBINED SOLID-PHASE CRYSTALLIZATION AND EXCIMER-LASER ANNEALING PROCESS FOR POLYSILICON THIN-FILM TRANSISTORS
Authors: PECORA A MARIUCCI L CARLUCCIO R FORTUNATO G LEGAGNEUX P PLAIS F REITA C PRIBAT D STOEMENOS J
Citation: A. Pecora et al., COMBINED SOLID-PHASE CRYSTALLIZATION AND EXCIMER-LASER ANNEALING PROCESS FOR POLYSILICON THIN-FILM TRANSISTORS, Physica status solidi. a, Applied research, 166(2), 1998, pp. 707-714
INFRARED CHARACTERIZATION OF CARBONIZATION OF SI SURFACES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: ELMEKKI MB PASCUAL J ANDROULIDAKI M ZEKENTES K CAMASSEL J STOEMENOS J
Citation: Mb. Elmekki et al., INFRARED CHARACTERIZATION OF CARBONIZATION OF SI SURFACES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, DIAMOND AND RELATED MATERIALS, 6(12), 1997, pp. 1772-1776
GROWTH OF SIC FILMS OBTAINED BY LPCVD
Authors: CLAVAGUERAMORA MT RODRIGUEZVIEJO J ELFELK Z HURTOS E BERBERICH S STOEMENOS J CLAVAGUERA N
Citation: Mt. Clavagueramora et al., GROWTH OF SIC FILMS OBTAINED BY LPCVD, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1306-1310
TOPOLOGY OF TWIN JUNCTIONS IN EPITAXIAL BETA-SIC
Authors: PAPAIOANNOU V KOMNINOU P DIMITRAKOPULOS GP ZEKENTES K PECZ B KARAKOSTAS T STOEMENOS J
Citation: V. Papaioannou et al., TOPOLOGY OF TWIN JUNCTIONS IN EPITAXIAL BETA-SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1362-1364
BETA-SIC FILMS ON SOI SUBSTRATES FOR HIGH-TEMPERATURE APPLICATIONS
Authors: REICHERT W OBERMEIER E STOEMENOS J
Citation: W. Reichert et al., BETA-SIC FILMS ON SOI SUBSTRATES FOR HIGH-TEMPERATURE APPLICATIONS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1448-1450
TRANSMISSION ELECTRON-MICROSCOPY CHARACTERIZATION OF METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN GAN LAYERS
Authors: PECZ B DIFORTEPOISSON MA TOTH L RADNOCZI G HUHN G PAPAIOANNOU V STOEMENOS J
Citation: B. Pecz et al., TRANSMISSION ELECTRON-MICROSCOPY CHARACTERIZATION OF METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN GAN LAYERS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 93-96
COMPARISON OF THE ELECTRICAL AND OPTICAL-PROPERTIES OF 3C-SIC ON SOI FROM DIFFERENT ORIGIN
Authors: BLUET JM CONTRERASAZEMA S CAMASSEL J ROBERT JL DICIOCCIO L REICHERT W LOSSY R OBERMEIER E STOEMENOS J
Citation: Jm. Bluet et al., COMPARISON OF THE ELECTRICAL AND OPTICAL-PROPERTIES OF 3C-SIC ON SOI FROM DIFFERENT ORIGIN, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 152-155
HIGH-TEMPERATURE OHMIC CONTACTS TO 3C-SIC GROWN ON SI SUBSTRATES BY CHEMICAL-VAPOR-DEPOSITION
Authors: CONSTANTINIDIS G KORNILIOS N ZEKENTES K STOEMENOS J DICIOCCIO L
Citation: G. Constantinidis et al., HIGH-TEMPERATURE OHMIC CONTACTS TO 3C-SIC GROWN ON SI SUBSTRATES BY CHEMICAL-VAPOR-DEPOSITION, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 176-179
DIFFUSION OF GOLD IN 3C-SIC EPITAXIALLY GROWN ON SI - STRUCTURAL CHARACTERIZATION
Authors: KORNILIOS N CONSTANTINIDIS G KAYIAMBAKI M ZEKENTES K STOEMENOS J
Citation: N. Kornilios et al., DIFFUSION OF GOLD IN 3C-SIC EPITAXIALLY GROWN ON SI - STRUCTURAL CHARACTERIZATION, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 186-189
STRUCTURAL AND GIANT MAGNETORESISTANCE CHARACTERIZATION OF AG-CO MULTILAYERS
Authors: ANGELAKERIS M POULOPOULOS P VALASSIADES O STOEMENOS J KALOGIROU O NIARCHOS D FLEVARIS NK
Citation: M. Angelakeris et al., STRUCTURAL AND GIANT MAGNETORESISTANCE CHARACTERIZATION OF AG-CO MULTILAYERS, Journal of magnetism and magnetic materials, 165(1-3), 1997, pp. 334-337
SILICON NANOCRYSTAL FORMATION IN THIN THERMAL-OXIDE FILMS BY VERY-LOWENERGY SI-IMPLANTATION( ION)
Authors: NORMAND P TSOUKALAS D KAPETANAKIS E VANDENBERG JA ARMOUR DG STOEMENOS J
Citation: P. Normand et al., SILICON NANOCRYSTAL FORMATION IN THIN THERMAL-OXIDE FILMS BY VERY-LOWENERGY SI-IMPLANTATION( ION), Microelectronic engineering, 36(1-4), 1997, pp. 79-82
STRUCTURE OF POLY-SI FILMS OBTAINED BY LASER ANNEALING
Authors: CARLUCCIO R CINA S FORTUNATO G FRILIGKOS S STOEMENOS J
Citation: R. Carluccio et al., STRUCTURE OF POLY-SI FILMS OBTAINED BY LASER ANNEALING, Thin solid films, 296(1-2), 1997, pp. 57-60
STRUCTURAL CHARACTERIZATION OF ALPHA-SI FILMS CRYSTALLIZED BY COMBINED FURNACE AND LASER ANNEALING
Authors: FRILIGKOS S PAPAIOANNOU V STOEMENOS J CARLUCCIO R CINA S FORTUNATO G
Citation: S. Friligkos et al., STRUCTURAL CHARACTERIZATION OF ALPHA-SI FILMS CRYSTALLIZED BY COMBINED FURNACE AND LASER ANNEALING, Journal of crystal growth, 182(3-4), 1997, pp. 341-351
THE FORMATION OF 3C-SIC IN CRYSTALLINE SI BY CARBON IMPLANTATION AT 950-DEGREES-C AND ANNEALING - A STRUCTURAL STUDY
Authors: FRANGIS N STOEMENOS J VANLANDUYT J NEJIM A HEMMENT PLF
Citation: N. Frangis et al., THE FORMATION OF 3C-SIC IN CRYSTALLINE SI BY CARBON IMPLANTATION AT 950-DEGREES-C AND ANNEALING - A STRUCTURAL STUDY, Journal of crystal growth, 181(3), 1997, pp. 218-228
SYNTHESIS OF SIC BY HIGH-TEMPERATURE C- THE ROLE OF SI( IMPLANTATION INTO SIO2 )SIO2 INTERFACE/
Authors: FREY L STOEMENOS J SCHORK R NEJIM A HEMMENT PLF
Citation: L. Frey et al., SYNTHESIS OF SIC BY HIGH-TEMPERATURE C- THE ROLE OF SI( IMPLANTATION INTO SIO2 )SIO2 INTERFACE/, Journal of the Electrochemical Society, 144(12), 1997, pp. 4314-4320
GAS-SOURCE MOLECULAR-BEAM EPITAXY OF BETA-SIC ON SI SUBSTRATES
Authors: ZEKENTES K BECOURT N ANDROULIDAKI M TSAGARAKI K STOEMENOS J BLUET JM CAMASSEL J PASCUAL J
Citation: K. Zekentes et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY OF BETA-SIC ON SI SUBSTRATES, Applied surface science, 102, 1996, pp. 22-27
HIGH-TEMPERATURE CARBON IMPLANTATION IN SIMOX
Authors: NEJIM A HEMMENT PL STOEMENOS J
Citation: A. Nejim et al., HIGH-TEMPERATURE CARBON IMPLANTATION IN SIMOX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 129-132
RADIATION-DAMAGE AND ANNEALING BEHAVIOR OF GE-IMPLANTED SIC()
Authors: PACAUD Y STOEMENOS J BRAUER G YANKOV RA HEERA V VOELSKOW M KOGLER R SKORUPA W
Citation: Y. Pacaud et al., RADIATION-DAMAGE AND ANNEALING BEHAVIOR OF GE-IMPLANTED SIC(), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 177-180
MICROSTRUCTURAL CHARACTERIZATION OF AMORPHIZED AND RECRYSTALLIZED 6H-SIC
Authors: PACAUD Y SKORUPA W STOEMENOS J
Citation: Y. Pacaud et al., MICROSTRUCTURAL CHARACTERIZATION OF AMORPHIZED AND RECRYSTALLIZED 6H-SIC, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 181-185
STRUCTURAL DEFECTS IN SIMOX
Authors: STOEMENOS J
Citation: J. Stoemenos, STRUCTURAL DEFECTS IN SIMOX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 206-213
INVESTIGATION OF THE DAMAGE-INDUCED BY 200 KEV GE-IMPLANTATION IN 6H-SIC( ION)
Authors: PACAUD Y SKORUPA W PEREZRODRIGUEZ A BRAUER G STOEMENOS J BARKLIE RC
Citation: Y. Pacaud et al., INVESTIGATION OF THE DAMAGE-INDUCED BY 200 KEV GE-IMPLANTATION IN 6H-SIC( ION), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 321-324
ION-BEAM SYNTHESIS OF BETA-SIC AT 950-DEGREES-C AND STRUCTURAL CHARACTERIZATION
Authors: FRANGIS N NEJIM A HEMMENT PLF STOEMENOS J VANLANDUYT J
Citation: N. Frangis et al., ION-BEAM SYNTHESIS OF BETA-SIC AT 950-DEGREES-C AND STRUCTURAL CHARACTERIZATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 325-329
SINGLE-CRYSTAL SILICON THIN-FILM TRANSISTORS FABRICATED AT LOW PROCESS TEMPERATURES ON GLASS SUBSTRATES
Authors: KOUVATSOS DN TSOUKALAS D SARCONA GT HATALIS MK STOEMENOS J
Citation: Dn. Kouvatsos et al., SINGLE-CRYSTAL SILICON THIN-FILM TRANSISTORS FABRICATED AT LOW PROCESS TEMPERATURES ON GLASS SUBSTRATES, Electronics Letters, 32(8), 1996, pp. 775-777
STRUCTURAL, OPTICAL AND ELECTRICAL-PROPERTIES OF STATE-OF-THE-ART CUBIC SIC FILMS
Authors: STOEMENOS J DEZAUZIER C ARNAUD G CONTRERAS S CAMASSEL J PASCUAL J ROBERT JL
Citation: J. Stoemenos et al., STRUCTURAL, OPTICAL AND ELECTRICAL-PROPERTIES OF STATE-OF-THE-ART CUBIC SIC FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 160-164
CHARACTERIZATION OF SEMIINSULATING POLYSILICON OXYGEN DOPED SILICON THIN-FILMS
Authors: LYNCH S GREEF R STOEMENOS J DARTNELL NJ LLOYD NS KERN P STUCK R CREAN GM
Citation: S. Lynch et al., CHARACTERIZATION OF SEMIINSULATING POLYSILICON OXYGEN DOPED SILICON THIN-FILMS, Materials science and technology, 11(1), 1995, pp. 80-84
Risultati: 1-25 | 26-43