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Results: 1-25/30
Authors:
PARK BE
SHOURIKI S
TOKUMITSU E
ISHIWARA H
Citation: Be. Park et al., FABRICATION OF PBZRXTI1-XO3 FILMS ON SI STRUCTURES USING Y2O3 BUFFER LAYERS, JPN J A P 1, 37(9B), 1998, pp. 5145-5149
Authors:
YOON SM
KURITA Y
TOKUMITSU E
ISHIWARA H
Citation: Sm. Yoon et al., ELECTRICAL CHARACTERISTICS OF NEURON OSCILLATION CIRCUITS COMPOSED OFMOSFETS AND COMPLEMENTARY UNIJUNCTION TRANSISTORS, JPN J A P 1, 37(3B), 1998, pp. 1110-1115
Authors:
YOON SM
TOKUMITSU E
ISHIWARA H
Citation: Sm. Yoon et al., ELECTRICAL-PROPERTIES OF LA0.7SR0.3COO3 PB(ZR0.52TI0.48)O-3/LA0.7SR0.3COO3 THIN-FILM CAPACITORS FORMED ON MGO SUBSTRATES USING THE SOL-GEL METHOD/, JPN J A P 2, 37(8A), 1998, pp. 936-938
Authors:
KAMEI T
TOKUMITSU E
ISHIWARA H
Citation: T. Kamei et al., NUMERICAL-ANALYSIS OF METAL-FERROELECTRIC-SEMICONDUCTOR FIELD-EFFECT-TRANSISTORS (MFS-FETS) CONSIDERING INHOMOGENEOUS FERROELECTRIC POLARIZATION, IEICE transactions on electronics, E81C(4), 1998, pp. 577-583
Authors:
PARK BE
IMADA S
TOKUMITSU E
ISHIWARA H
Citation: Be. Park et al., ANNEALING EFFECT OF THE CEO2 BUFFER LAYERS FOR PZT CEO2/SI(111) STRUCTURES/, Journal of the Korean Physical Society, 32, 1998, pp. 1390-1392
Authors:
AIZAWA K
OHTAKE S
TOKUMITSU E
ISHIWARA H
Citation: K. Aizawa et al., C-V CHARACTERISTICS OF AL BAMGF4/SI(111) DIODES FABRICATED BY DRY-ETCHING PROCESS/, Journal of the Korean Physical Society, 32, 1998, pp. 1192-1194
Authors:
ISHIWARA H
SHIMAMURA T
TOKUMITSU E
Citation: H. Ishiwara et al., PROPOSAL OF A SINGLE-TRANSISTOR-CELL-TYPE FERROELECTRIC MEMORY USING AN SOI STRUCTURE AND EXPERIMENTAL-STUDY ON THE INTERFERENCE PROBLEM INTHE WRITE OPERATION, JPN J A P 1, 36(3B), 1997, pp. 1655-1658
Authors:
AIZAWA K
MORIWAKI M
ICHIKI T
TOKUMITSU E
ISHIWARA H
Citation: K. Aizawa et al., GROWTH AND CRYSTALLINITY OF FERROELECTRIC BAMGF4 FILMS ON (111)-ORIENTED PT FILMS, JPN J A P 2, 36(2B), 1997, pp. 234-237
Authors:
TOKUMITSU E
SHIMAMURA T
ISHIWARA H
Citation: E. Tokumitsu et al., ELECTRICAL-PROPERTIES OF FERROELECTRIC-CAPACITOR-GATE SI MOS-TRANSISTORS USING P(L)ZT FILMS, Integrated ferroelectrics, 15(1-4), 1997, pp. 137-144
Authors:
AIZAWA K
OKAMOTO T
TOKUMITSU E
ISHIHWARA H
Citation: K. Aizawa et al., FABRICATION AND CHARACTERIZATION OF METAL-FERROELECTRICS-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR USING EPITAXIAL BAMGF4 FILMS GROWN ON SI(111) SUBSTRATES, Integrated ferroelectrics, 15(1-4), 1997, pp. 245-252
Authors:
TOKUMITSU E
NAKAMURA R
ISHIWARA H
Citation: E. Tokumitsu et al., NONVOLATILE MEMORY OPERATIONS OF METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR (MFIS) FETS USING PLZT STO/SI(100) STRUCTURES/, IEEE electron device letters, 18(4), 1997, pp. 160-162
Authors:
HAYASHI T
YOSHIHARA M
OHMI S
TOKUMITSU E
ISHIWARA H
Citation: T. Hayashi et al., ELECTRICAL-PROPERTIES OF FERROELECTRIC BAMGF4 FILMS GROWN ON GAAS SUBSTRATES USING ALGAAS BUFFER LAYER, Applied surface science, 117, 1997, pp. 418-422
Authors:
PARK BE
SAKAI I
TOKUMITSU E
ISHIWARA H
Citation: Be. Park et al., HYSTERESIS CHARACTERISTICS OF VACUUM-EVAPORATED FERROELECTRIC PBZR0.4TI0.6O3 FILMS ON SI(111) SUBSTRATES USING CEO2 BUFFER LAYERS, Applied surface science, 117, 1997, pp. 423-428
Authors:
YOON SM
TOKUMITSU E
ISHIWARA H
Citation: Sm. Yoon et al., PREPARATION OF PBZRXTI1-XO3 LA1-XSRXCOO3 HETEROSTRUCTURES USING THE SOL-GEL METHOD AND THEIR ELECTRICAL-PROPERTIES/, Applied surface science, 117, 1997, pp. 447-452
Authors:
ISHIWARA H
AOYAMA Y
OKADA S
SHIMAMURA C
TOKUMITSU E
Citation: H. Ishiwara et al., FERROELECTRIC NEURON CIRCUITS WITH ADAPTIVE-LEARNING FUNCTION, Computers & electrical engineering, 23(6), 1997, pp. 431-438
Authors:
OHMI S
YOSHIHARA M
OKAMOTO T
TOKUMITSU E
ISHIWARA H
Citation: S. Ohmi et al., ELECTRICAL-PROPERTIES OF FERROELECTRIC GATE HEMT STRUCTURES, JPN J A P 1, 35(2B), 1996, pp. 1254-1257
Authors:
AIZAWA K
ICHIKI T
OKAMOTO T
TOKUMITSU E
ISHIWARA H
Citation: K. Aizawa et al., FERROELECTRIC PROPERTIES OF BAMGF4 FILMS GROWN ON SI(100), SI(111), AND PT(111) SIO2/SI(100) STRUCTURES/, JPN J A P 1, 35(2B), 1996, pp. 1525-1530
Authors:
MOON BK
TOKUMITSU E
ISHIWARA H
Citation: Bk. Moon et al., FORMATION OF HIGH-DIELECTRIC OXIDE-FILMS ON SRVO3-XSI SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 41(1), 1996, pp. 157-160
Authors:
TOKUMITSU E
NAKAMURA BI
ISHIWARA H
Citation: E. Tokumitsu et al., FABRICATIONS OF FERROELECTRIC-GATE FIELD-EFFECT-TRANSISTORS USING P(L)ZT FILMS, Journal of the Korean Physical Society, 29, 1996, pp. 640-643
Authors:
TOKUMITSU E
ITANI K
MOON BK
ISHIWARA H
Citation: E. Tokumitsu et al., CRYSTALLINE QUALITY AND ELECTRICAL-PROPERTIES OF PBZRXTI1-XO3 THIN-FILMS PREPARED ON SRTIO3-COVERED SI SUBSTRATES, JPN J A P 1, 34(9B), 1995, pp. 5202-5206
Authors:
TOKUMITSU E
NAKAMURA R
ITANI K
ISHIWARA H
Citation: E. Tokumitsu et al., FILM QUALITY DEPENDENCE OF ADAPTIVE-LEARNING PROCESSES IN NEURODEVICES USING FERROELECTRIC PBZRXTI1-XO3(PZT) FILMS, JPN J A P 1, 34(2B), 1995, pp. 1061-1065
Authors:
OHMI S
TOKUMITSU E
ISHIWARA H
Citation: S. Ohmi et al., CONTACTLESS MEASUREMENT OF ELECTRON-MOBILITY IN FERROELECTRIC GATE HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES, JPN J A P 2, 34(5B), 1995, pp. 603-605
Authors:
TOKUMITSU E
UENO S
NAKAMURA RI
ISHIWARA H
Citation: E. Tokumitsu et al., CHARACTERIZATION OF PB(ZRXTI1-X)O-3 FILMS PREPARED BY VACUUM EVAPORATION METHOD, Integrated ferroelectrics, 7(1-4), 1995, pp. 215-223
Authors:
TANISAKE N
ITANI K
KIM KH
TOKUMITSU E
ISHIWARA H
Citation: N. Tanisake et al., STUDY ON GRADUAL REVERSAL OF POLARIZATION IN FERROELECTRIC PZT THIN-FILMS FOR ADAPTIVE-LEARNING MFSFET APPLICATIONS, Integrated ferroelectrics, 6(1-4), 1995, pp. 69-80
Authors:
OHMI SI
TOKUMITSU E
ISHIWARA H
Citation: Si. Ohmi et al., CHARACTERIZATION OF FERROELECTRIC BAMGF4 FILMS GROWN ON ALGAAS GAAS(100) HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES/, Journal of crystal growth, 150(1-4), 1995, pp. 1104-1107