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Results: 1-25 | 26-26
Results: 1-25/26
Threshold characteristics of lambda=1.55 mu m InGaAsP/InP heterolasers
Authors: Zegrya, GG Pikhtin, NA Skrynnikov, GV Slipchenko, SO Tarasov, IS
Citation: Gg. Zegrya et al., Threshold characteristics of lambda=1.55 mu m InGaAsP/InP heterolasers, SEMICONDUCT, 35(8), 2001, pp. 962-969
Record power characteristics of InGaAs/AlGaAs/GaAs heterostructure lasers
Authors: Livshits, DA Egorov, AY Kochnev, IV Kapitonov, VA Lantratov, VM Ledentsov, NN Nalyot, TA Tarasov, IS
Citation: Da. Livshits et al., Record power characteristics of InGaAs/AlGaAs/GaAs heterostructure lasers, SEMICONDUCT, 35(3), 2001, pp. 365-369
Optical study of InP quantum dots
Authors: Vinokurov, DA Kapitonov, VA Nikolaev, DN Sokolova, ZN Tarasov, IS
Citation: Da. Vinokurov et al., Optical study of InP quantum dots, SEMICONDUCT, 35(2), 2001, pp. 235-237
MOCVD-grown broad area InGaAs/GaAs/InGaP laser diodes
Authors: Vinokurov, DA Kapitonov, VA Nikolaev, DN Stankevich, AL Lyutetskii, AV Pikhtin, NA Slipchenko, SO Sokolova, ZN Fetisova, NV Arsent'ev, IN Tarasov, IS
Citation: Da. Vinokurov et al., MOCVD-grown broad area InGaAs/GaAs/InGaP laser diodes, SEMICONDUCT, 35(11), 2001, pp. 1324-1328
Mesastripe single-mode separately bounded lasers based on InGaAsP/InP heterostructures obtained by VPE of organometallic compounds
Authors: Golikova, EG Gorbylev, VA Il'in, YV Kureshov, VA Leshko, AY Lyutetskii, AV Pikhtin, NA Ryaboshtan, YA Simakov, VA Tarasov, IS Tret'yakova, EA Fetisova, NV
Citation: Eg. Golikova et al., Mesastripe single-mode separately bounded lasers based on InGaAsP/InP heterostructures obtained by VPE of organometallic compounds, TECH PHYS L, 26(4), 2000, pp. 295-297
Separately bounded InGaAsP high-power laser heterostructures obtained by VPE of organometallic compounds
Authors: Golikova, EG Gorbylev, VA Davidyuk, NY Kureshov, VA Leshko, AY Lyutetskii, AV Pikhtin, NA Ryaboshtan, YA Simakov, VA Tarasov, IS Fetisova, NV
Citation: Eg. Golikova et al., Separately bounded InGaAsP high-power laser heterostructures obtained by VPE of organometallic compounds, TECH PHYS L, 26(3), 2000, pp. 225-227
The properties of InGaAsP/InP heterolasers with step-divergent waveguides
Authors: Golikova, EG Kureshov, VA Leshko, AY Livshits, DA Lyutetskii, AV Nikolaev, DN Pikhtin, NA Ryaboshtan, YA Slipchenko, SO Tarasov, IS Fetisova, NV
Citation: Eg. Golikova et al., The properties of InGaAsP/InP heterolasers with step-divergent waveguides, TECH PHYS L, 26(10), 2000, pp. 913-915
Properties of wide-mesastripe InGaAsP/InP lasers
Authors: Golikova, EG Kureshov, VA Leshko, AY Lyutetskii, AV Pikhtin, NA Ryaboshtan, YA Skrynnikov, GA Tarasov, IS Alferov, ZI
Citation: Eg. Golikova et al., Properties of wide-mesastripe InGaAsP/InP lasers, SEMICONDUCT, 34(7), 2000, pp. 853-856
Power conversion efficiency of quantum dot laser diodes
Authors: Zhukov, AE Kovsh, AR Mikhrin, SS Maleev, NA Odnoblyudov, VA Ustinov, VM Shernyakov, YM Kondrat'eva, EY Livshits, DA Tarasov, IS Ledentsov, NN Kop'ev, PS Alferov, ZI Bimberg, D
Citation: Ae. Zhukov et al., Power conversion efficiency of quantum dot laser diodes, SEMICONDUCT, 34(5), 2000, pp. 609-613
Photoluminescent and electroluminescent properties of spontaneously forming periodic InGaAsP structures
Authors: Vavilova, LS Kapitonov, VA Livshits, DA Lyutetskii, AV Murashova, AV Pikhtin, NA Skrynnikov, GV Tarasov, IS
Citation: Ls. Vavilova et al., Photoluminescent and electroluminescent properties of spontaneously forming periodic InGaAsP structures, SEMICONDUCT, 34(3), 2000, pp. 319-322
On the internal quantum efficiency and carrier ejection in InGaAsP/InP-based quantum-well lasers
Authors: Leshko, AY Lyutetskii, AV Pikhtin, NA Skrynnikov, GV Sokolova, ZN Tarasov, IS Fetisova, NV
Citation: Ay. Leshko et al., On the internal quantum efficiency and carrier ejection in InGaAsP/InP-based quantum-well lasers, SEMICONDUCT, 34(12), 2000, pp. 1397-1401
Epitaxial deposition of InGaAsP solid solutions in the miscibility gap
Authors: Vavilova, LS Kapitonov, VA Murashova, AV Tarasov, IS
Citation: Ls. Vavilova et al., Epitaxial deposition of InGaAsP solid solutions in the miscibility gap, SEMICONDUCT, 34(11), 2000, pp. 1255-1258
The power density giving rise to optical degradation of mirrors in InGaAs/AlGaAs/GaAs-Based laser diodes
Authors: Kotel'nikov, EY Katsnel'son, AA Kudryashov, IV Rastegaeva, MG Richter, W Evtikhiev, VP Tarasov, IS Alferov, ZI
Citation: Ey. Kotel'Nikov et al., The power density giving rise to optical degradation of mirrors in InGaAs/AlGaAs/GaAs-Based laser diodes, SEMICONDUCT, 34(11), 2000, pp. 1341-1342
A spatially single-mode laser for a range of 1.25-1.28 mu m on the basis of InAs quantum dots on a GaAs substrate
Authors: Mikhrin, SS Zhukov, AE Kovsh, AR Maleev, NA Ustinov, VM Shernyakov, YM Kayander, IN Kondrat'eva, EY Livshits, DA Tarasov, IS Maksimov, MV Tsatsul'nikov, AF Ledentsov, NN Kop'ev, PS Bimberg, D Alferov, ZI
Citation: Ss. Mikhrin et al., A spatially single-mode laser for a range of 1.25-1.28 mu m on the basis of InAs quantum dots on a GaAs substrate, SEMICONDUCT, 34(1), 2000, pp. 119-121
0.94 mu m diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots
Authors: Mikhrin, SS Zhukov, AE Kovsh, AR Maleev, NA Ustinov, VM Shernyakov, YM Soshnikov, IP Livshits, DA Tarasov, IS Bedarev, DA Volovik, BV Maximov, MV Tsatsul'nikov, AF Ledentsov, NN Kop'ev, PS Bimberg, D Alferov, ZI
Citation: Ss. Mikhrin et al., 0.94 mu m diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots, SEMIC SCI T, 15(11), 2000, pp. 1061-1064
Improved catastrophic optical mirror damage level in InGaAs/AlGaAs laser diodes
Authors: Livshits, DA Kochnev, IV Lantratov, VM Ledentsov, NN Nalyot, TA Tarasov, IS Alferov, ZI
Citation: Da. Livshits et al., Improved catastrophic optical mirror damage level in InGaAs/AlGaAs laser diodes, ELECTR LETT, 36(22), 2000, pp. 1848-1849
Collective resonance and form factor of homogeneous broadening in semiconductors
Authors: Zaitsev, SV Gordeev, NY Karachinsky, LY Kopchatov, VI Novikov, II Tarasov, IS Pikhtin, NA Ustinov, VM Kop'ev, PS
Citation: Sv. Zaitsev et al., Collective resonance and form factor of homogeneous broadening in semiconductors, APPL PHYS L, 76(18), 2000, pp. 2514-2516
High-power broad-band single-mode InGaAsP/InP superluminescent diode
Authors: Pikhtin, NA Il'in, YV Leshko, AY Lyutetskii, AV Stankevich, AL Tarasov, IS Fetisova, NV
Citation: Na. Pikhtin et al., High-power broad-band single-mode InGaAsP/InP superluminescent diode, TECH PHYS L, 25(8), 1999, pp. 598-600
Quantum-dot injection heterolaser with 3.3 W output power
Authors: Kovsh, AR Livshits, DA Zhukov, AE Egorov, AY Maksimov, MV Ustinov, VM Tarasov, IS Ledentsov, NN Kop'ev, PS Alferov, ZI Bimberg, D
Citation: Ar. Kovsh et al., Quantum-dot injection heterolaser with 3.3 W output power, TECH PHYS L, 25(6), 1999, pp. 438-439
Influence of heating of the active region in InGaAsP/InP injection lasers on their spectral characteristics
Authors: Karachinskii, LY Georgievskii, AM Pikhtin, NA Zaitsev, SV Tarasov, IS Kop'ev, PS
Citation: Ly. Karachinskii et al., Influence of heating of the active region in InGaAsP/InP injection lasers on their spectral characteristics, TECH PHYS L, 25(4), 1999, pp. 334-336
InGaAs/InP heterostructures with strained quantum wells and quantum dots (lambda=1.5-1.9 mu m)
Authors: Sokolova, ZN Vinokurov, DA Tarasov, IS Gun'ko, NA Zegrya, GG
Citation: Zn. Sokolova et al., InGaAs/InP heterostructures with strained quantum wells and quantum dots (lambda=1.5-1.9 mu m), SEMICONDUCT, 33(9), 1999, pp. 1007-1009
Spontaneously assembling periodic composition-modulated InGaAsP structures
Authors: Vavilova, LS Kapitonov, VA Murashova, AV Pikhtin, NA Tarasov, IS Ipatova, IP Shchukin, VA Bert, NA Sitnikova, AA
Citation: Ls. Vavilova et al., Spontaneously assembling periodic composition-modulated InGaAsP structures, SEMICONDUCT, 33(9), 1999, pp. 1010-1012
Self-organized nanoscale InP islands in an InGaP GaAs host and InAs islands in an InGaAs InP host
Authors: Vinokurov, DA Kapitonov, VA Kovalenkov, OV Livshits, DA Sokolova, ZN Tarasov, IS Alferov, ZI
Citation: Da. Vinokurov et al., Self-organized nanoscale InP islands in an InGaP GaAs host and InAs islands in an InGaAs InP host, SEMICONDUCT, 33(7), 1999, pp. 788-791
Spontaneously forming periodic composition-modulated InGaAsP structures
Authors: Bert, NA Vavilova, LS Ipatova, IP Kapitonov, VA Murashova, AV Pikhtin, NA Sitnikova, AA Tarasov, IS Shchukin, VA
Citation: Na. Bert et al., Spontaneously forming periodic composition-modulated InGaAsP structures, SEMICONDUCT, 33(5), 1999, pp. 510-513
3.9W CW power from sub-monolayer quantum dot diode laser
Authors: Zhukov, AE Kovsh, AR Mikhrin, SS Maleev, NA Ustinov, VM Livshits, DA Tarasov, IS Bedarev, DA Maximov, MV Tsatsul'nikov, AF Soshnikov, IP Kop'ev, PS Alferov, ZI Ledentsov, NN Bimberg, D
Citation: Ae. Zhukov et al., 3.9W CW power from sub-monolayer quantum dot diode laser, ELECTR LETT, 35(21), 1999, pp. 1845-1847
Risultati: 1-25 | 26-26