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Results: 1-25/27
Authors:
FAREED RSQ
DHANASEKARAN R
Citation: Rsq. Fareed et R. Dhanasekaran, STUDIES ON THE GROWTH-MECHANISM OF INGAAS DURING CURRENT-CONTROLLED LIQUID-PHASE EPITAXY, Materials chemistry and physics, 51(3), 1997, pp. 239-245
Authors:
GOPALAKRISHNAN N
DHANASEKARAN R
LOURDUDOSS S
Citation: N. Gopalakrishnan et al., COMPOSITIONAL ANALYSIS ON QUATERNARY GAXIN1-XASYP1-Y VAPOR-PHASE EPITAXY - A COMPARISON BETWEEN THEORY AND EXPERIMENT, Materials chemistry and physics, 50(1), 1997, pp. 70-75
Authors:
SENGUTTUVAN N
BABU SM
DHANASEKARAN R
Citation: N. Senguttuvan et al., SOME ASPECTS ON THE GROWTH OF LEAD MOLYBDATE SINGLE-CRYSTALS AND THEIR CHARACTERIZATION, Materials chemistry and physics, 49(2), 1997, pp. 120-123
Authors:
SASIKALA G
DHANASEKARAN R
SUBRAMANIAN C
Citation: G. Sasikala et al., ELECTRODEPOSITION AND OPTICAL CHARACTERIZATION OF CDS THIN-FILMS ON ITO-COATED GLASS, Thin solid films, 302(1-2), 1997, pp. 71-76
Authors:
TAFRESHI MJ
BALAKRISHNAN K
DHANASEKARAN R
Citation: Mj. Tafreshi et al., MICROMORPHOLOGICAL STUDIES ON THE ZNSE SINGLE-CRYSTALS GROWN BY CHEMICAL-VAPOR TRANSPORT TECHNIQUE, Journal of Materials Science, 32(13), 1997, pp. 3517-3521
Authors:
SEKAR C
DHANASEKARAN R
SUBRAMANIAN C
Citation: C. Sekar et al., EFFECT OF MOLECULAR ROTATION ON VAPOR-PHASE NUCLEATION - FULLERENES C-60 AND C-70, Fullerene science and technology, 4(3), 1996, pp. 553-563
Authors:
DIZAJI HR
DHANASEKARAN R
Citation: Hr. Dizaji et R. Dhanasekaran, CONCENTRATION PROFILE AND GROWTH-RATE STUDIES OF IN1-XGAXP LPE BY COMPUTER-SIMULATION TECHNIQUE, Journal of materials science. Materials in electronics, 7(3), 1996, pp. 181-185
Authors:
DIZAJI HR
DHANASEKARAN R
Citation: Hr. Dizaji et R. Dhanasekaran, STUDIES ON THE CONCENTRATION PROFILES AND GROWTH-RATE OF GAP BY LIQUID-PHASE EPITAXY, Journal of materials science. Materials in electronics, 7(2), 1996, pp. 107-110
Authors:
RAJALAKSHMI T
FAREED RSQ
DHANASEKARAN R
RAMASAMY P
THOMAS J
Citation: T. Rajalakshmi et al., CHARACTERIZATION OF UREA SINGLE-CRYSTALS, Materials science & engineering. B, Solid-state materials for advanced technology, 39(2), 1996, pp. 111-115
Authors:
DIZAJI HR
DHANASEKARAN R
Citation: Hr. Dizaji et R. Dhanasekaran, SIMULATION STUDIES OF LIQUID-PHASE EPITAXIAL-GROWTH OF IN1-XGAXAS, Materials science & engineering. B, Solid-state materials for advanced technology, 39(2), 1996, pp. 117-122
Authors:
JOTHILINGAM R
DHANASEKARAN R
Citation: R. Jothilingam et R. Dhanasekaran, STUDIES OF THE INITIAL-STAGES OF LIQUID-PHASE EPITAXY GROWTH OF INGAAS ON GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 38(1-2), 1996, pp. 186-193
Authors:
TAFRESHI MJ
BALAKRISHNAN K
DHANASEKARAN R
Citation: Mj. Tafreshi et al., GROWTH, ELECTRICAL-CONDUCTIVITY AND MICROINDENTATION STUDIES OF CUINS2 SINGLE-CRYSTALS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 18(4), 1996, pp. 471-476
Authors:
GOPALAKRISHNAN N
DHANASEKARAN R
Citation: N. Gopalakrishnan et R. Dhanasekaran, EVALUATION OF COMPOSITION AND GROWTH-RATE OF GAXIN1-XP VAPOR-PHASE EPITAXY, Materials chemistry and physics, 45(1), 1996, pp. 15-21
Authors:
DIZAJI HR
DHANASEKARAN R
Citation: Hr. Dizaji et R. Dhanasekaran, A THEORETICAL APPROACH TO THE IN1-XGAXP LPE GROWTH BY COMPUTER-SIMULATION TECHNIQUE, Physica status solidi. a, Applied research, 156(1), 1996, pp. 71-79
Authors:
TAFRESHI MJ
BALAKRISHNAN K
KUMAR J
DHANASEKARAN R
ATTOLINI G
Citation: Mj. Tafreshi et al., STUDY ON THE CRYSTALLIZATION AND MECHANICAL-BEHAVIOR OF CDIN2S4 SINGLE-CRYSTALS, Indian Journal of Pure & Applied Physics, 34(1), 1996, pp. 18-21
Authors:
GOPALAKRISHNAN N
DHANASEKARAN R
Citation: N. Gopalakrishnan et R. Dhanasekaran, THERMODYNAMIC ANALYSIS OF GAAS1-XPX VAPOR-PHASE EPITAXY, Journal of the Electrochemical Society, 143(8), 1996, pp. 2631-2635
Authors:
FAREED RSQ
DHANASEKARAN R
Citation: Rsq. Fareed et R. Dhanasekaran, AN INVESTIGATION OF THE DIFFUSION AND ELECTROMIGRATION LIMITED GROWTH-MECHANISM OF INP, Materials science & engineering. B, Solid-state materials for advanced technology, 34(2-3), 1995, pp. 152-158
INVESTIGATION OF CONCENTRATION PROFILES AND GROWTH-RATE OF INAS LPE BY COMPUTER-SIMULATION TECHNIQUE
Authors:
DIZAJI HR
DHANASEKARAN R
Citation: Hr. Dizaji et R. Dhanasekaran, INVESTIGATION OF CONCENTRATION PROFILES AND GROWTH-RATE OF INAS LPE BY COMPUTER-SIMULATION TECHNIQUE, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 17(6), 1995, pp. 601-607
Authors:
JOTHILINGAM R
DHANASEKARAN R
RAMASAMY P
Citation: R. Jothilingam et al., STUDIES ON NUCLEATION KINETICS OF IN1-XGAXP GAAS BY LIQUID-PHASE EPITAXY/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 17(2), 1995, pp. 117-128
Authors:
SASIKALA G
BABU SM
DHANASEKARAN R
Citation: G. Sasikala et al., ELECTROCRYSTALLIZATION AND CHARACTERIZATION OF CUINSE2 THIN-FILMS, Materials chemistry and physics, 42(3), 1995, pp. 210-213
Authors:
TAFRESHI MJ
BALAKRISHNAN K
DHANASEKARAN R
Citation: Mj. Tafreshi et al., GROWTH AND CHARACTERIZATION OF PENTENARY CU0.5AG0.5INSSE CRYSTALS GROWN BY CHEMICAL-VAPOR TRANSPORT TECHNIQUE, Materials research bulletin, 30(11), 1995, pp. 1371-1377
Authors:
TAFRESHI MJ
BALAKRISHNAN K
DHANASEKARAN R
Citation: Mj. Tafreshi et al., MICROHARDNESS AND OPTICAL STUDIES ON CDS SINGLE-CRYSTALS GROWN BY SUBLIMATION AND HYDROGEN TRANSPORT TECHNIQUES, Materials research bulletin, 30(11), 1995, pp. 1387-1392
Authors:
JOTHILINGAM R
DHANASEKARAN R
RAMASAMY P
Citation: R. Jothilingam et al., INVESTIGATIONS ON THE NUCLEATION PARAMETERS OF INGAAS GROWN ON INP DURING LPE, Journal of materials science. Materials in electronics, 5(5), 1994, pp. 267-271
Authors:
FAREED RSQ
DHANASEKARAN R
RAMASAMY P
Citation: Rsq. Fareed et al., INVESTIGATION ON THE CONCENTRATION PROFILES OF AS DURING THE CURRENT-CONTROLLED LIQUID-PHASE EPITAXIAL-GROWTH OF GAAS, Journal of crystal growth, 140(1-2), 1994, pp. 28-32
Authors:
GOPALAKRISHNAN N
DHANASEKARAN R
RAMASAMY P
Citation: N. Gopalakrishnan et al., INVESTIGATIONS ON THE 2-DIMENSIONAL NUCLEATION AND GROWTH-KINETICS OFINP VAPOR-PHASE EPITAXY, Journal of crystal growth, 137(1-2), 1994, pp. 235-239