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Results: 51-75/84
Authors:
DUBUC JP
SIMOEN E
VASINA P
CLAEYS C
Citation: Jp. Dubuc et al., LOW-FREQUENCY NOISE BEHAVIOR OF HIGH-ENERGY ELECTRON-IRRADIATED SI N(+)P JUNCTION DIODES, Electronics Letters, 31(12), 1995, pp. 1016-1018
Authors:
SIMOEN E
CLAEYS C
Citation: E. Simoen et C. Claeys, SUBSTRATE CURRENT CHARACTERISTICS IN PARTIALLY DEPLETED SILICON-ON-INSULATOR N-MOSFETS FROM ROOM-TEMPERATURE DOWN TO 4.2 K, Cryogenics, 35(5), 1995, pp. 321-326
Authors:
SIMOEN E
CLAEYS C
Citation: E. Simoen et C. Claeys, SUBSTRATE BIAS EFFECT ON THE CAPTURE KINETICS OF RANDOM TELEGRAPH SIGNALS IN SUBMICRON P-CHANNEL SILICON METAL-OXIDE-SEMICONDUCTOR TRANSISTORS, Applied physics letters, 66(5), 1995, pp. 598-600
Authors:
VANHELLEMONT J
SIMOEN E
CLAEYS C
Citation: J. Vanhellemont et al., EXTRACTION OF THE MINORITY-CARRIER RECOMBINATION LIFETIME FROM FORWARD DIODE CHARACTERISTICS, Applied physics letters, 66(21), 1995, pp. 2894-2896
Authors:
SIMOEN E
CLAEYS C
Citation: E. Simoen et C. Claeys, SUBSTRATE BIAS EFFECT ON THE CAPTURE KINETICS OF RANDOM TELEGRAPH SIGNALS IN SUBMICRON P-CHANNEL SILICON METAL-OXIDE-SEMICONDUCTOR TRANSISTORS (VOL 66, PG 598, 1995), Applied physics letters, 66(21), 1995, pp. 2914-2914
Authors:
SIMOEN E
BOSMAN G
VANHELLEMONT J
CLAEYS C
Citation: E. Simoen et al., IMPACT OF THE SUBSTRATE ON THE LOW-FREQUENCY NOISE OF SILICON N(+)P JUNCTION DIODES, Applied physics letters, 66(19), 1995, pp. 2507-2509
Authors:
SIMOEN E
CLAEYS C
Citation: E. Simoen et C. Claeys, DC CHARACTERISTICS OF GATE-ALL-AROUND (GAA) SILICON-ON-INSULATOR MOSFETS AT CRYOGENIC TEMPERATURES, Journal de physique. IV, 4(C6), 1994, pp. 51-56
Authors:
SIMOEN E
CLAEYS C
Citation: E. Simoen et C. Claeys, LOW-TEMPERATURE OPERATION OF SILICON-ON-INSULATOR INVERTERS, Journal de physique. IV, 4(C6), 1994, pp. 63-68
Authors:
SIMOEN E
DIERICKX B
DECANNE B
THOMA F
CLAEYS C
Citation: E. Simoen et al., ON THE GATE-VOLTAGE AND DRAIN-VOLTAGE DEPENDENCE OF THE RTS AMPLITUDEIN SUBMICRON MOSTS, Applied physics. A, Solids and surfaces, 58(4), 1994, pp. 353-358
Authors:
SIMOEN E
VANSTRAELEN G
CLAEYS C
Citation: E. Simoen et al., THE CRYOGENIC BEHAVIOR OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS FABRICATED IN HIGH-RESISTIVITY SILICON SUBSTRATES, Semiconductor science and technology, 9(9), 1994, pp. 1679-1685
Authors:
KANIAVA A
VANHELLEMONT J
SIMOEN E
CLAEYS C
Citation: A. Kaniava et al., DEEP LEVELS IN HEAT-TREATED AND CF-252-IRRADIATED P-TYPE SILICON SUBSTRATES WITH DIFFERENT OXYGEN-CONTENT, Semiconductor science and technology, 9(8), 1994, pp. 1474-1479
Authors:
GERN L
RAIS O
CAPIAU C
HAUSER P
LOBET Y
SIMOEN E
VOET P
PETRE J
Citation: L. Gern et al., IMMUNIZATION OF MICE BY RECOMBINANT OSPA PREPARATIONS AND PROTECTION AGAINST BORRELIA-BURGDORFERI INFECTION-INDUCED BY IXODES-RICINUS TICK BITES, Immunology letters, 39(3), 1994, pp. 249-258
Authors:
SIMOEN E
CLAEYS C
Citation: E. Simoen et C. Claeys, THE USE OF BODY TIES IN PARTIALLY DEPLETED SOI MOSTS OPERATING AT CRYOGENIC TEMPERATURES, Solid-state electronics, 37(12), 1994, pp. 1933-1936
Authors:
SIMOEN E
CLAEYS C
Citation: E. Simoen et C. Claeys, RANDOM TELEGRAPH SIGNALS IN SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR TRANSISTORS, Journal of applied physics, 75(7), 1994, pp. 3647-3653
Authors:
VANHELLEMONT J
SIMOEN E
CLAEYS C
KANIAVA A
GAUBAS E
BOSMAN G
JOHLANDER B
ADAMS L
CLAUWS P
Citation: J. Vanhellemont et al., ON THE IMPACT OF LOW FLUENCE IRRADIATION WITH MEV PARTICLES ON SILICON DIODE CHARACTERISTICS AND RELATED MATERIAL PROPERTIES, IEEE transactions on nuclear science, 41(6), 1994, pp. 1924-1931
Authors:
VANHELLEMONT J
KANIAVA A
SIMOEN E
TRAUWAERT MA
CLAEYS C
JOHLANDER B
HARBOESORENSEN R
ADAMS L
CLAUWS P
Citation: J. Vanhellemont et al., GENERATION AND ANNEALING BEHAVIOR OF MEV PROTON AND CF-252 IRRADIATION-INDUCED DEEP LEVELS IN SILICON DIODES, IEEE transactions on nuclear science, 41(3), 1994, pp. 479-486
Authors:
MARTINO JA
ROTONDARO ALP
SIMOEN E
MAGNUSSON U
CLAEYS C
Citation: Ja. Martino et al., TRANSIENT EFFECTS IN ACCUMULATION-MODE P-CHANNEL SOI MOSFETS OPERATING AT 77-K, I.E.E.E. transactions on electron devices, 41(4), 1994, pp. 519-523
Authors:
SIMOEN E
MAGNUSSON U
ROTONDARO ALP
CLAEYS C
Citation: E. Simoen et al., THE KINK-RELATED EXCESS LOW-FREQUENCY NOISE IN SILICON-ON-INSULATOR MOSTS, I.E.E.E. transactions on electron devices, 41(3), 1994, pp. 330-339
Authors:
SIMOEN E
SMEYS PIL
CLAEYS C
Citation: E. Simoen et al., THE LOW-FREQUENCY NOISE OVERSHOOT IN PARTIALLY DEPLETED N-CHANNEL SILICON-ON-INSULATOR TWIN-MOSTS, I.E.E.E. transactions on electron devices, 41(11), 1994, pp. 1972-1976
Authors:
CLAEYS C
SIMOEN E
Citation: C. Claeys et E. Simoen, THE PERSPECTIVES OF SILICON-ON-INSULATOR TECHNOLOGIES FOR CRYOGENIC APPLICATIONS, Journal of the Electrochemical Society, 141(9), 1994, pp. 2522-2532
Authors:
SIMOEN E
CLAEYS C
Citation: E. Simoen et C. Claeys, EMPIRICAL RELATIONSHIP BETWEEN THE LOW-FREQUENCY NOISE SPECTRAL DENSITY AND THE TRANSCONDUCTANCE OF SILICON-ON-INSULATOR N-CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS, Applied physics letters, 65(15), 1994, pp. 1946-1948
Authors:
SIMOEN E
CLAEYS C
Citation: E. Simoen et C. Claeys, LIQUID-HELIUM TEMPERATURE HOT-CARRIER DEGRADATION OF SI P-CHANNEL MOSTS, IEE proceedings. Part G. Circuits, devices and systems, 140(6), 1993, pp. 431-436
Authors:
SIMOEN E
DIERICKX B
CLAEYS C
Citation: E. Simoen et al., HOT-CARRIER DEGRADATION OF THE RANDOM TELEGRAPH SIGNAL AMPLITUDE IN SUBMICROMETER SI MOSTS, Applied physics. A, Solids and surfaces, 57(3), 1993, pp. 283-289
Authors:
SIMOEN E
CLAEYS C
Citation: E. Simoen et C. Claeys, ALTERNATIVE RANDOM TELEGRAPH SIGNAL MECHANISMS IN SILICON-ON-INSULATOR MOS-TRANSISTORS, Microelectronic engineering, 22(1-4), 1993, pp. 185-188
Authors:
MARTINO JA
SIMOEN E
MAGNUSSON U
ROTONDARO ALP
CLAEYS C
Citation: Ja. Martino et al., SIMPLE METHOD FOR THE DETERMINATION OF THE INTERFACE TRAP DENSITY AT 77-K IN FULLY DEPLETED ACCUMULATION MODE SOI MOSFETS, Solid-state electronics, 36(6), 1993, pp. 827-832