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Results: 1-25/34
Authors:
BELYI VA
KOMAROV FF
Citation: Va. Belyi et Ff. Komarov, FLUCTUATION MECHANISM FOR FORMATION OF DISCONTINUOUS TRACKS BY FAST IONS IN CRYSTALS, Technical physics, 43(9), 1998, pp. 1048-1050
Authors:
DUDCHIK YI
KOMAROV FF
KONSTANTINOV YA
Citation: Yi. Dudchik et al., FORMATION OF X-RAY-BEAMS WITH THE AID OF A TAPERED MICROCAPILLARY, Technical physics, 43(5), 1998, pp. 562-564
Authors:
KOMAROV FF
KOMAROV AF
Citation: Ff. Komarov et Af. Komarov, EFFECT OF THE INITIAL CHARGE AND CHARGE-STATE FLUCTUATIONS ON THE RANGE PARAMETERS OF HIGH-ENERGY IONS, Journal of experimental and theoretical physics, 86(2), 1998, pp. 270-275
Authors:
BORZDOV VM
GALENCHIK VO
KOMAROV FF
Citation: Vm. Borzdov et al., SELF-CONSISTENT MONTE-CARLO SIMULATION OF HIGH-FIELD ELECTRON-TRANSPORT IN SI-INVERSION LAYER WITH ACCOUNT OF ELECTRON-ELECTRON SCATTERING, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 5-6, 1998, pp. 73-78
Authors:
HERRE O
WESCH W
WENDLER E
GAIDUK PI
KOMAROV FF
KLAUMUNZER S
MEIER P
Citation: O. Herre et al., FORMATION OF DISCONTINUOUS TRACKS IN SINGLE-CRYSTALLINE INP BY 250-MEV XE-ION IRRADIATION, Physical review. B, Condensed matter, 58(8), 1998, pp. 4832-4837
Authors:
VRUBEL MM
BORZDOV VM
KOMAROV FF
Citation: Mm. Vrubel et al., EFFECT OF THE WIDTH OF THE SPACER LAYERS ON THE SIZE OF THE BISTABILITY REGION IN THE CURRENT-VOLTAGE CHARACTERISTICS OF 2-BARRIER TUNNEL RESONANCE DIODES, Technical physics letters, 23(11), 1997, pp. 823-824
Authors:
BORZDOV VM
KOMAROV FF
HOMICH AV
ZHEVNYAK OG
Citation: Vm. Borzdov et al., MONTE-CARLO SIMULATION OF IMPURITY AND SURFACE-ROUGHNESS SCATTERING EFFECT ON NONSTATIONARY HOT-ELECTRON TRANSPORT IN GAAS QUANTUM-WIRE, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 10, 1997, pp. 63-69
Authors:
KOMAROV FF
MOZOLEVSKI IE
MATSU PP
ANANICH SE
Citation: Ff. Komarov et al., DISTRIBUTION OF IMPLANTED IMPURITIES AND DEPOSITED ENERGY IN HIGH-ENERGY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 124(4), 1997, pp. 478-483
Authors:
KOMAROV FF
MOZOLEVSKII IE
MATUS PP
ANANICH SE
Citation: Ff. Komarov et al., DISTRIBUTION OF IMPLANTED IMPURITY AND IS OLATED ENERGY DUE TO THE HIGH-ENERGY ION-IMPLANTATION, Zurnal tehniceskoj fiziki, 67(1), 1997, pp. 61-67
Authors:
GAIDUK PI
KOMAROV FF
Citation: Pi. Gaiduk et Ff. Komarov, FORMATION OF SEGREGATED CELL STRUCTURE FOR MBE GROWTH OF MISMATCHED SEMICONDUCTORS, Thin solid films, 306(2), 1997, pp. 352-355
Authors:
KOMAROV FF
LABUDA AA
SIDERKO AA
SAPUN IP
Citation: Ff. Komarov et al., MECHANICAL STRESSES IN FILMS OF DOPED SIL ICATE-GLASSES, Doklady Akademii nauk BSSR, 41(5), 1997, pp. 114-117
Authors:
KOMAROV FF
Citation: Ff. Komarov, EFFECTS OF LATENT TRACKS FORMED BY HIGH-ENERGY ION-IMPLANTATION IN CRYSTALS, Langmuir, 12(1), 1996, pp. 199-206
Authors:
HERRE O
WENDLER E
ACHTZIGER N
LICHT T
REISLOHNER U
RUB M
BACHMANN T
WESCH W
GAIDUK PI
KOMAROV FF
Citation: O. Herre et al., DAMAGE PRODUCTION IN GAAS DURING MEV ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 230-235
Authors:
KOMAROV FF
KOMAROV AF
MIRONOV AM
Citation: Ff. Komarov et al., SIMULATION OF ION-BEAM-ASSISTED DEPOSITION OF LAYERS ON METALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 115(1-4), 1996, pp. 505-507
Authors:
ZUKOWSKI P
KARWAT C
KOMAROV FF
LATUSZYNSKI A
Citation: P. Zukowski et al., FORMATION OF COPPER NITRIDES IN THE COURSE OF IMPLANTING COPPER WITH LARGE DOSES OF NITROGEN-IONS, Physica status solidi. a, Applied research, 157(2), 1996, pp. 373-378
Authors:
BORZDOV VM
ZHEVNYAK OG
KOMAROV FF
Citation: Vm. Borzdov et al., EFFECT OF ELECTRON-ELECTRON SCATTERING ON CARRIER TRANSPORT IN THE N-CHANNEL OF A SUBMICRON SILICON MOS FIELD-EFFECT TRANSISTOR - MONTE-CARLO STUDY, Semiconductors, 29(2), 1995, pp. 95-98
Authors:
KOMAROV FF
MOZOLEVSKI IE
ROGACH VP
Citation: Ff. Komarov et al., 2-DIMENSIONAL BOLTZMANN TRANSPORT-EQUATION APPROACH TO SIMULATION OF LOCAL ION-IMPLANTATION, Radiation effects and defects in solids, 133(2), 1995, pp. 133-139
Authors:
KUTAS AA
KOVYAZINA TV
AKIMOV AN
GUSAKOV GA
KOMAROV FF
NOVIKOV AP
VLASUKOVA LA
Citation: Aa. Kutas et al., DYNAMIC ANNEALING OF DAMAGE IN AR-IMPLANTED GAAS CRYSTALS(), Materials science & engineering. B, Solid-state materials for advanced technology, 34(1), 1995, pp. 32-35
Authors:
BORZDOV VM
KOMAROV FF
PETROVICH TA
Citation: Vm. Borzdov et al., EFFECTIVE POLARIZABILITY OF 2DEG IN SILICON INVERSION LAYER FOR IONIZED IMPURITY SCATTERING AT LOW-TEMPERATURES, Physica status solidi. b, Basic research, 188(2), 1995, pp. 5-8
Authors:
BORZDOV VM
VRUBEL MM
ZHEVNYAK OG
KOMAROV FF
Citation: Vm. Borzdov et al., ESTIMATE OF THE EFFECT OF QUANTUM HOLE SH APE ON THE ELECTRON-TRANSFER IN THE INVERSION LAYER OF MOS FIELD TRANSISTORS, Pis'ma v Zurnal tehniceskoj fiziki, 21(7), 1995, pp. 69-73
Authors:
AKIMOV AN
VLASUKOVA LA
GUSAKOV GA
KOMAROV FF
KUTAS AA
NOVIKOV AP
Citation: An. Akimov et al., ION-INDUCED ANNEALING OF DAMAGE IN GAAS IMPLANTED WITH ARGON IONS, Radiation effects and defects in solids, 129(3-4), 1994, pp. 147-154
Authors:
BORZDOV VM
KOMAROV FF
PETROVICH TA
VRUBEL MM
ZHEVNYAK OG
Citation: Vm. Borzdov et al., EFFECT OF TEMPERATURE AND ELECTRON-CONCENTRATION ON THE EFFECTIVE POLARIZABILITY OF 2DEG IN THE SILICON INVERSION LAYER FOR SURFACE-ROUGHNESS SCATTERING, Physica status solidi. b, Basic research, 183(2), 1994, pp. 110000047-110000049
Authors:
GAIDUK PI
KOMAROV FF
WITZMANN A
ZENTGRAF A
SCHIPPEL S
Citation: Pi. Gaiduk et al., EFFECT OF KR-MIXING AND THERMAL-TREATMENT ON CO-SILICIDE FORMATION(), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 94(3), 1994, pp. 231-236
Authors:
KOMAROV FF
PILKO VV
YAKUSHEV VA
TISHKOV VS
Citation: Ff. Komarov et al., SUPER-HARD CUBIC BN LAYER FORMATION BY NITROGEN ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 94(3), 1994, pp. 237-239
Authors:
KOMAROV AF
KOMAROV FF
FEDOTOV SA
Citation: Af. Komarov et al., MODELING THE SIMULTANEOUS PROCESS OF FORM ATION OF SILYCIDES AND HIDDEN INSULATING SI3N4 LAYERS IN THE REGIME OF HIGH-INTENSE ION-IMPLANTATION, Zurnal tehniceskoj fiziki, 64(9), 1994, pp. 136-143