AAAAAA

   
Results: 1-24 |
Results: 24
The electron irradiation effects on silicon gate dioxide used for power MOS devices
Authors: Badila, M Godignon, P Millan, J Berberich, S Brezeanu, G
Citation: M. Badila et al., The electron irradiation effects on silicon gate dioxide used for power MOS devices, MICROEL REL, 41(7), 2001, pp. 1015-1018
SiC power DIMOS with double implanted Al/B P-well
Authors: Godignon, P Morvan, E Jorda, X Vellvehi, M Flores, D Rebollo, J
Citation: P. Godignon et al., SiC power DIMOS with double implanted Al/B P-well, MICROELEC J, 32(5-6), 2001, pp. 503-507
Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage
Authors: Brezeanu, G Badila, M Tudor, B Millan, J Godignon, P Udrea, F Amaratunga, GAJ Mihaila, A
Citation: G. Brezeanu et al., Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage, IEEE DEVICE, 48(9), 2001, pp. 2148-2153
Lift-off technology for SiCUV detectors
Authors: Badila, M Brezeanu, G Millan, J Godignon, P Locatelli, ML Chante, JP Lebedev, A Lungu, P Dinca, G Banu, V Banoiu, G
Citation: M. Badila et al., Lift-off technology for SiCUV detectors, DIAM RELAT, 9(3-6), 2000, pp. 994-997
Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy
Authors: Savkina, NS Lebedev, AA Davydov, DV Strel'chuk, AM Tregubova, AS Raynaud, C Chante, JP Locatelli, ML Planson, D Milan, J Godignon, P Campos, FJ Mestres, N Pascual, J Brezeanu, G Badila, M
Citation: Ns. Savkina et al., Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy, MAT SCI E B, 77(1), 2000, pp. 50-54
Dynamic latch-up in advanced LIGBT structures at high operating temperatures
Authors: Vellvehi, M Jorda, X Flores, D Morvan, E Godignon, P Rebollo, J Millan, J
Citation: M. Vellvehi et al., Dynamic latch-up in advanced LIGBT structures at high operating temperatures, MAT SCI E B, 74(1-3), 2000, pp. 304-308
Electrical characteristics modeling of large area boron compensated 6H-SiCpn structures
Authors: Brezeanu, G Badila, M Tudor, B Godignon, P Millan, J Locatelli, ML Chante, JP Lebedev, A Savkina, NS
Citation: G. Brezeanu et al., Electrical characteristics modeling of large area boron compensated 6H-SiCpn structures, SOL ST ELEC, 44(4), 2000, pp. 571-579
Electrical characterisation of Si3N4/SiO2 double layers on p-type 6H-SiC
Authors: Berberich, S Godignon, P Morvan, E Fonseca, L Millan, J Hartnagel, HL
Citation: S. Berberich et al., Electrical characterisation of Si3N4/SiO2 double layers on p-type 6H-SiC, MICROEL REL, 40(4-5), 2000, pp. 833-836
An improved technology of 6H-SiC power diodes
Authors: Badila, M Brezeanu, G Dilimot, G Millan, J Godignon, P Chante, JP Locatelli, ML Mestres, N Lebedev, A
Citation: M. Badila et al., An improved technology of 6H-SiC power diodes, MICROELEC J, 31(11-12), 2000, pp. 955-962
Electrical characterisation of MNOS devices on p-type 6H-SiC
Authors: Berberich, S Godignon, P Millan, J Planson, D Hartnagel, HL Senes, A
Citation: S. Berberich et al., Electrical characterisation of MNOS devices on p-type 6H-SiC, DIAM RELAT, 8(2-5), 1999, pp. 305-308
Mapping of 6H-SiC for implantation control
Authors: Morvan, E Godignon, P Montserrat, J Flores, D Jorda, X Vellvehi, M
Citation: E. Morvan et al., Mapping of 6H-SiC for implantation control, DIAM RELAT, 8(2-5), 1999, pp. 335-340
Temperature behavior of the 6H-SiC pn diodes
Authors: Badila, M Chante, JP Locatelli, ML Millan, J Godignon, P Brezeanu, G Tudor, B Lebedev, A
Citation: M. Badila et al., Temperature behavior of the 6H-SiC pn diodes, DIAM RELAT, 8(2-5), 1999, pp. 341-345
Confocal micro-Raman scattering and Rutherford backscattering characterization of lattice damage in aluminum implanted 6H-SiC
Authors: Campos, FJ Mestres, N Alsina, F Pascual, J Morvan, E Godignon, P Millan, J
Citation: Fj. Campos et al., Confocal micro-Raman scattering and Rutherford backscattering characterization of lattice damage in aluminum implanted 6H-SiC, DIAM RELAT, 8(2-5), 1999, pp. 357-360
P-N Junction creation in 6H-SiC by aluminum implantation
Authors: Ottaviani, L Locatelli, ML Planson, D Isoird, K Chante, JP Morvan, E Godignon, P
Citation: L. Ottaviani et al., P-N Junction creation in 6H-SiC by aluminum implantation, MAT SCI E B, 61-2, 1999, pp. 424-428
On the interpretation of high frequency capacitance data of 6H-SiC boron compensated pin junction
Authors: Brezeanu, G Badila, M Tudor, B Millan, J Godignon, P Chante, JP Locatelli, ML Lebedev, A Banu, V
Citation: G. Brezeanu et al., On the interpretation of high frequency capacitance data of 6H-SiC boron compensated pin junction, MAT SCI E B, 61-2, 1999, pp. 429-432
Current-voltage characteristics of large area 6H-SiC pin diodes
Authors: Badila, M Tudor, B Brezeanu, G Locatelli, ML Chante, JP Millan, J Godignon, P Lebedev, A Banu, V
Citation: M. Badila et al., Current-voltage characteristics of large area 6H-SiC pin diodes, MAT SCI E B, 61-2, 1999, pp. 433-436
Electronic stopping power for Monte Carlo simulation of ion implantation into SiC
Authors: Morvan, E Godignon, P Berberich, S Vellvehi, M Millan, J
Citation: E. Morvan et al., Electronic stopping power for Monte Carlo simulation of ion implantation into SiC, NUCL INST B, 147(1-4), 1999, pp. 68-73
As-Al recoil implantation through Si3N4 barrier layer
Authors: Godignon, P Morvan, E Montserrat, J Jorda, X Flores, D Rebollo, J
Citation: P. Godignon et al., As-Al recoil implantation through Si3N4 barrier layer, NUCL INST B, 147(1-4), 1999, pp. 101-105
Aluminum multiple implantations in 6H-SiC at 300 K
Authors: Ottaviani, L Morvan, E Locatelli, ML Planson, D Godignon, P Chante, JP Senes, A
Citation: L. Ottaviani et al., Aluminum multiple implantations in 6H-SiC at 300 K, SOL ST ELEC, 43(12), 1999, pp. 2215-2223
Electrical characteristics of advanced lateral insulated-gate bipolar transistor structures at 77 K
Authors: Vellvehi, M Jorda, X Flores, D Godignon, P Rebollo, J Millan, J
Citation: M. Vellvehi et al., Electrical characteristics of advanced lateral insulated-gate bipolar transistor structures at 77 K, MICROEL REL, 39(8), 1999, pp. 1239-1246
Experimental and simulation results on the switching behaviour of lateral insulated gate bipolar transistor structures
Authors: Vellvehi, M Jorda, X Godignon, P Flores, D Hidalgo, S Rebollo, J
Citation: M. Vellvehi et al., Experimental and simulation results on the switching behaviour of lateral insulated gate bipolar transistor structures, MICROELEC J, 30(6), 1999, pp. 583-589
Double gate MOS-thyristor devices with and without forward bias safe operating area capability: the insulated base MOS-controlled thyristor and the dual MOS-gated thyristor
Authors: Flores, D Godignon, P Jorda, X Vellvehi, M Fernandez, J Millan, J
Citation: D. Flores et al., Double gate MOS-thyristor devices with and without forward bias safe operating area capability: the insulated base MOS-controlled thyristor and the dual MOS-gated thyristor, MICROELEC J, 30(6), 1999, pp. 591-597
Confocal micro-Raman characterization of lattice damage in high energy aluminum implanted 6H-SiC
Authors: Campos, FJ Mestres, N Pascual, J Morvan, E Godignon, P Millan, J
Citation: Fj. Campos et al., Confocal micro-Raman characterization of lattice damage in high energy aluminum implanted 6H-SiC, J APPL PHYS, 85(1), 1999, pp. 99-104
Channeling implantations of Al+ into 6H silicon carbide
Authors: Morvan, E Godignon, P Vellvehi, M Hallen, A Linnarsson, M Kuznetsov, AY
Citation: E. Morvan et al., Channeling implantations of Al+ into 6H silicon carbide, APPL PHYS L, 74(26), 1999, pp. 3990-3992
Risultati: 1-24 |